参数资料
型号: LTC3876EFE#PBF
厂商: Linear Technology
文件页数: 3/48页
文件大小: 0K
描述: IC CTLR DC/DC DDR DUAL 38-TSSOP
产品培训模块: LTC3876 Dual DC/DC Controller
标准包装: 50
应用: 控制器,DDR,DDR2,DDR3
输入电压: 4.5 V ~ 38 V
输出数: 2
输出电压: 可调
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 38-TFSOP (0.173",4.40mm 宽)裸露焊盘
供应商设备封装: 38-TSSOP 裸露焊盘
包装: 管件

LTC3876
ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the specified operating
junction temperature range, otherwise specifications are at T A = 25°C. V IN = 15V unless otherwise noted. (Note 3)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Main Control Loop
V IN
Input Voltage Operating Range
4.5
38
V
VDDQ(REG)
VTTR(REG)
VTTSNS(REG)
VDDQ Regulated Operating Range
VTTR Regulated Operating Range
VTTSNS Regulated Operating Range
VDDQ Regulates Differentially with Respect
to V OUTSENSE1– , VTTSNS and VTTR Regulate
Differentially to One-Half VDDQ with Respect to
V OUSTSENSE1–
1.0
0.5
0.5
2.5
1.25
1.25
V
V
V
I Q
Input DC Supply Current
Both Channels Enabled
Shutdown Supply Current
MODE/PLLIN = 0V, No Load
RUN1 = RUN2 = 0V
5000
20
μA
μA
V DFB1(REG)
Regulated Differential Feedback Voltage on ITH1 = 1.2V (Note 5)
Channel 1, VDDQ
(V OUTSENSE1+ – V OUTSENSE1– )
Regulated Differential Feedback Voltage
on Channel 1, VDDQ Over Line, Load and
Common Mode
T A = 25°C
T A = 0°C to 85°C
T A = –40°C to 125°C
V IN = 4.5V to 38V, ITH1 = 0.5V to 1.9V,
V OUTSENSE1– = ±500mV (Notes 5, 7)
T A = 0°C to 85°C
T A = –40°C to 125°C
l
l
l
l
0.5985
0.596
0.594
0.594
0.591
0.6
0.6
0.6
0.6
0.6015
0.604
0.606
0.606
0.609
V
V
V
V
V
VTTSNS(REG)
Regulated Voltage Error on Channel 2,
VTTSNS (Referenced to VTTR)
ITH2 = 1.4V (Note 5)
T A = 0°C to 85°C
T A = –40°C to 125°C
l
l
–10
–15
10
15
mV
mV
Regulated Voltage Error on Channel 2,
V IN = 4.5V to 38V, ITH1 = 0.5V to 1.9V,
VTTSNS Over Line, Load and Common
Mode. (Referenced to VTTR)
(Notes 5, 7)
T A = 0°C to 85°C
T A = –40°C to 125°C
l
l
–15
–20
15
20
mV
mV
I VOUTSENSE1+
I VOUTSENSE1–
I VTTSNS
g m(EA)1,2
t ON(MIN)1,2
t OFF(MIN)1,2
V OUTSENSE1+ Input Bias Current
V OUTSENSE1– Input Bias Current
I VTTSNS Input Bias Current
Error Amplifier Transconductance
Minimum On-Time
Minimum Off-Time
V DFB1 [V OUTSENSE1+ – V OUTSENSE1– ] = 0.6V
V DFB1 [V OUTSENSE1+ – V OUTSENSE1– ] = 0.6V
I VTTSNS = 750mV
ITH = 1.2V (Note 3)
V IN = 38V, R T = 20k, VDDSNS = 1.2V, V SENSE– = 0.6V
±5
–25
±5
1.7
30
90
±25
–50
±50
nA
μA
nA
mS
ns
ns
Current Sensing
V SENSE1(MAX)
V SENSE1(MIN)
V SENSE2(MAX)
V SENSE2(MIN)
I SENSE1,2+
I SENSE1,2–
Maximum Valley Current Sense Threshold V RNG = 2V, V DFB1 = 0.57V, V SENSE1– = 1.5V
(V SENSE1+ – V SENSE1– ) V RNG = 0V, V DFB1 = 0.57V, V SENSE1– = 1.5V
V RNG = INTV CC , V DFB1 = 0.57V, V SENSE1– = 1.5V
V RNG = 2V, V DFB1 = 0.63V, V SENSE1– = 1.5V
Minimum Valley Current Sense Threshold
(V SENSE1+ – V SENSE1– )
V RNG = 0V, V DFB1 = 0.63V, V SENSE1– = 1.5V
V RNG = INTV CC , V DFB1 = 0.63V, V SENSE1– = 1.5V
(Forced Continuous Mode)
Maximum Valley Current Sense Threshold V RNG = 2V, VTTSNS = 0.72V, V SENSE2– = 0.75V
(V SENSE2+ – V SENSE2– ) V RNG = 0V, VTTSNS = 0.72V, V SENSE2– = 0.75V
V RNG = INTV CC , VTTSNS = 0.72V, V SENSE2– = 0.75V
V RNG = 2V, VTTSNS = 0.78V, V SENSE2– = 0.75V
Minimum Valley Current Sense Threshold
(V SENSE1+ – V SENSE1– )
V RNG = 0V, VTTSNS = 0.78V, V SENSE2– = 0.75V
V RNG = INTV CC , VTTSNS = 0.78V, V SENSE2– = 0.75V
(Forced Continuous Mode)
SENSE1,2 + Pins Input Bias Current
V SENSE+ = 0.6V
V SENSE+ = 2.5V
SENSE2 – Pins Input Bias Current
V SENSE1– = 0.6V
V SENSE1– = 2.5V
(Internal 500k Resistor to SGND)
l
l
l
l
l
l
80
21
39
80
21
39
100
30
50
–50
–15
–25
100
30
50
–120
–36
–60
±5
1
1.2
5
120
40
61
120
40
61
±50
±2
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
nA
μA
μA
μA
3876f
3
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