参数资料
型号: LTC4110EUHF#PBF
厂商: Linear Technology
文件页数: 47/52页
文件大小: 0K
描述: IC BATTERY BACKUP MANAGER 38-QFN
标准包装: 52
功能: 备份管理
电池化学: 铅酸,锂离子,锂聚合物,镍镉,镍氢,超级电容器
电源电压: 4.5 V ~ 19 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 38-WFQFN 裸露焊盘
供应商设备封装: 38-QFN(5x7)
包装: 管件
产品目录页面: 1341 (CN2011-ZH PDF)
LTC4110
APPLICATIONS INFORMATION
PCB LAYOUT CONSIDERATIONS
For maximum ef?ciency, the switch node rise and fall
times should be minimized. To prevent magnetic and
electrical ?eld (EMI) radiation and high frequency resonant
problems, proper layout of the components connected to
the IC is essential.
Flyback Layout
Lowest EMI and maximum ef?ciency are obtained when the
high frequency switching current loop area is minimized.
It is best to make direct connections, avoiding the use of
other circuit board copper planes, i.e. no vias, in making
the following connections for this prevents current based
noise injection into the copper planes below.
1. Input/output capacitors positive terminals need to
be placed as close as possible between the ?yback
transformer “top” or positive supply rail connections
and R SNS(FET) ground connection.
2. Place ?yback MOSFETs drain connections right next
to the ?yback transformers “bottom” connections.
3. Place the R SNS(FET) current sense resistor right next
to the N-MOSFET source connections completing
the connection back to the input/output capacitors’
negative terminals.
4. Place the snubber connections as close as possible
to the circuit after the above layout connections are
completed as required. Again, avoid using vias.
5. The layer below the ?yback layout should be ground.
Other Recommendations
6. Optionally use vias to connect power supply sources
positive and negative (ground) connections from
other copper layers to the ?yback layout. Place
multiple vias in a tight cluster such that they act as
one large via. Recommended 1 via for each 0.5A of
current
7. The current sense feedback traces must be routed
together as a single pair on the same layer at any
given time with smallest trace spacing possible.
Locate any ?lter component on these traces next to
the IC and not at the sense resistor location.
8. The control IC must be close to the switching FET’s
gate terminals. Keep the gate drive signals short for
a clean FET drive. This includes IC supply pins that
connect to the switching FET source pins. The IC can
be placed on the opposite side of the PCB relative to
?yback layout above.
9. Figure 21 shows an inexpensive way to achieve
Kelvin like sensing using standard current sense
resistors.
DIRECTION OF CHARGING CURRENT
R SNS(BAT)
4110 F21
TO CSP AND CSN
Figure 21. Kelvin Sensing of Battery Current
4110fb
47
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