参数资料
型号: M25P40-VMN6TG/X
厂商: NUMONYX
元件分类: PROM
英文描述: 512K X 8 SPI BUS SERIAL EEPROM, PDSO8
封装: 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
文件页数: 14/57页
文件大小: 1160K
代理商: M25P40-VMN6TG/X
M25P40
Instructions
21/57
6.3
Read Identification (RDID)
The Read Identification (RDID) instruction allows to read the device identification data:
Manufacturer identification (1 byte)
Device identification (2 bytes)
A Unique ID code (UID) (17 bytes, of which 16 available upon customer request).(2)
The manufacturer identification is assigned by JEDEC, and has the value 20h for Numonyx.
The device identification is assigned by the device manufacturer, and indicates the memory
type in the first byte (20h), and the memory capacity of the device in the second byte (13h).
The UID contains the length of the following data in the first byte (set to 10h), and 16 bytes
of the optional Customized Factory Data (CFD) content. The CFD bytes are read-only and
can be programmed with customers data upon their demand. If the customers do not make
requests, the devices are shipped with all the CFD bytes programmed to zero (00h). Any
Read Identification (RDID) instruction while an Erase or Program cycle is in progress, is not
decoded, and has no effect on the cycle that is in progress. The device is first selected by
driving Chip Select (S) Low. Then, the 8-bit instruction code for the instruction is shifted in.
After this, the 24-bit device identification, stored in the memory, the 8-bit CFD length
followed by 16 bytes of CFD content will be shifted out on Serial Data output (Q). Each bit is
shifted out during the falling edge of Serial Clock (C).
The instruction sequence is shown in Figure 9.
The Read Identification (RDID) instruction is terminated by driving Chip Select (S) High at
any time during data output.
When Chip Select (S) is driven High, the device is put in the Stand-by Power mode. Once in
the Stand-by Power mode, the device waits to be selected, so that it can receive, decode
and execute instructions.
2. The UID feature is available only for process technology T9HX devices, identified by with process identification
digit "4" in the device marking and process letter "B" in the part number.
Table 5.
Read Identification (RDID) data-out sequence
Manufacturer identification
Device identification
UID
Memory type
Memory capacity
CFD length
CFD content
20h
13h
10h
16 bytes
相关PDF资料
PDF描述
M25P40VMF6 4 Mbit Uniform Sector, Serial Flash Memory
M25P40VMF6G 4 Mbit Uniform Sector, Serial Flash Memory
M25P40VMF6P 4 Mbit Uniform Sector, Serial Flash Memory
M25P40VMF6T 4 Mbit Uniform Sector, Serial Flash Memory
M25P40VMF6TG 4 Mbit Uniform Sector, Serial Flash Memory
相关代理商/技术参数
参数描述
M25P40VMN6TP 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
M25P40-VMN6TP 功能描述:闪存 SERIAL SECTOR ERASE FLASH 4MEG RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
M25P40-VMN6TP/X 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface
M25P40-VMN6TP_NUD 制造商:Micron Technology Inc 功能描述:
M25P40-VMN6TPB 功能描述:IC FLASH 4MBIT 75MHZ 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:Forté™ 标准包装:2,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:256K (32K x 8) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:28-TSSOP(0.465",11.8mm 宽) 供应商设备封装:28-TSOP 包装:带卷 (TR) 其它名称:71V256SA15PZGI8