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参数资料
| 型号： | M25P40-VMN6TG/X |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 512K X 8 SPI BUS SERIAL EEPROM, PDSO8 |
| 封装： | 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8 |
| 文件页数： | 24/57页 |
| 文件大小： | 1160K |
| 代理商： | M25P40-VMN6TG/X |
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Instructions
M25P40
30/57
6.9
Sector Erase (SE)
The Sector Erase (SE) instruction sets to 1 (FFh) all bits inside the chosen sector. Before it
can be accepted, a Write Enable (WREN) instruction must previously have been executed.
After the Write Enable (WREN) instruction has been decoded, the device sets the Write
Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code, and three address bytes on Serial Data input (D). Any address inside the
Sector (see Table 3) is a valid address for the Sector Erase (SE) instruction. Chip Select (S)
must be driven Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 15.
Chip Select (S) must be driven High after the eighth bit of the last address byte has been
latched in, otherwise the Sector Erase (SE) instruction is not executed. As soon as Chip
Select (S) is driven High, the self-timed Sector Erase cycle (whose duration is tSE) is
initiated. While the Sector Erase cycle is in progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1
during the self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified
time before the cycle is completed, the Write Enable Latch (WEL) bit is reset.
A Sector Erase (SE) instruction applied to a page which is protected by the Block Protect
Figure 15.
Sector Erase (SE) instruction sequence
1. Address bits A23 to A19 are Don’t Care.
24 Bit Address
C
D
AI03751D
S
2
1
3456789
29 30 31
Instruction
0
23 22
2
0
1
MSB
相关PDF资料 |
PDF描述 |
|---|---|
| M25P40VMF6 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40VMF6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40VMF6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40VMF6T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40VMF6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25P40VMN6TP | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P40-VMN6TP | 功能描述:闪存 SERIAL SECTOR ERASE FLASH 4MEG RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M25P40-VMN6TP/X | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface |
| M25P40-VMN6TP_NUD | 制造商:Micron Technology Inc 功能描述: |
| M25P40-VMN6TPB | 功能描述:IC FLASH 4MBIT 75MHZ 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:Forté™ 标准包装:2,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:256K (32K x 8) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:28-TSSOP（0.465"，11.8mm 宽） 供应商设备封装:28-TSOP 包装:带卷 (TR) 其它名称:71V256SA15PZGI8 |
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