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参数资料
型号： M25P40-VMN6TG/X
厂商： NUMONYX
元件分类： PROM
英文描述： 512K X 8 SPI BUS SERIAL EEPROM, PDSO8
封装： 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
文件页数： 51/57页
文件大小： 1160K
代理商： M25P40-VMN6TG/X
M25P40
Revision history
55/57
22-Dec-2005
8.0
Note 2 added below Figure 26 and note 3 added below Figure 29
tRES1 and tRES2 modified in Table 20: AC characteristics (50 MHz operation, device
grade 6, VCC min = 2.7 V)
.
Read Identification (RDID)
added. Titles of Figure 29 and Table 26 corrected.
14-Apr-2006
9
The data contained in Table 12 and Table 19 is no longer preliminary data.
Figure 3: Bus Master and memory devices on the SPI bus
modified and Note 2
added.
40 MHz frequency condition modified for ICC3 in Table 15: DC characteristics
(device grade 3)
.
Condition changed for the Data Retention parameter in Table 12: Data retention and
endurance
. VWI parameter for device grade 3 added to Table 8: Power-up timing
and VWI threshold
.
SO8 package specifications updated (see Figure 26 and Table 23).
/X process added to Table 27: Ordering information scheme.
05-Jun-2006
10
tRES1 and tRES2 parameter timings changed for devices produced with the “X”
process technology in Table 19 and Table 19.
SO8 Narrow package specifications updated (see Figure 26 and Table 23).
18-Dec-2006
11
Hardware Write Protection feature added on page 1. Small text changes.
Section 2.7: VCC supply voltage
and Section 2.8: VSS ground added.
Figure 3: Bus Master and memory devices on the SPI bus
modified, note 2 removed
and replaced by explanatory paragraph.
WIP bit behavior specified at Power-up in Section 7: Power-up and Power-down.
TLEAD added to Table 9: Absolute maximum ratings and VIO max modified.
VFQFPN8 package specifications updated (see Table 26 and Figure 29).
25-Jan-2007
12
VCC voltage range from W17 2007 is extended to 2.3 V to 3.6 V.
Table 21: AC characteristics (33 MHz operation, device grade 6, VCCmin =2.3 V)
added.
AC characteristics at 40 MHz removed.
15-May-2007
13
40 MHz operation added (see Table 21: AC characteristics (*40 MHz operation,
device grade 6, VCC min = 2.3 V)
.
Removed the note below Table 10.
Removed “AC characteristics (33 MHz operation, device grade 6, VCCmin =2.3 V)”
Table.
26-Jun-2007
14
Modified the note below Table 13.
Changed test condition for ICC3 in Table 14.
Changed clock frequency, from 20 to 25 MHz, in Table 20 and Table 21.
10-Dec-2007
15
Added Numonyx Branding.
15-Oct-2008
16
Changed frequency up to 75 MHz (only in the standard Vcc range).
Added new packages.
Added UID/CFD protection.
Extended Vcc range to 2.3 V.
Table 28.
Document revision history (continued)
Date
Revision
Changes
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相关代理商/技术参数
参数描述
M25P40VMN6TP 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
M25P40-VMN6TP 功能描述:闪存 SERIAL SECTOR ERASE FLASH 4MEG RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
M25P40-VMN6TP/X 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface
M25P40-VMN6TP_NUD 制造商:Micron Technology Inc 功能描述:
M25P40-VMN6TPB 功能描述:IC FLASH 4MBIT 75MHZ 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:Forté™ 标准包装:2,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:256K (32K x 8) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:28-TSSOP（0.465"，11.8mm 宽） 供应商设备封装:28-TSOP 包装:带卷 (TR) 其它名称:71V256SA15PZGI8
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