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参数资料
| 型号： | M25P40-VMN6TG/X |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 512K X 8 SPI BUS SERIAL EEPROM, PDSO8 |
| 封装： | 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8 |
| 文件页数： | 52/57页 |
| 文件大小： | 1160K |
| 代理商： | M25P40-VMN6TG/X |
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Revision history
M25P40
56/57
18-February-
2009
17
Revised the following:
– Table 8: Vwi Min (Grade 3) = 1V vs. 2.1V or (remove one row & Grade indication)
– Table 11: Erase/Program cycles = 100000 cycles also for Grade 3 (instead of
10000)
– Table 13: Icc3 Operating Current (READ) ' change on section Test Condition
OLD: C = 0.1VCC / 0.9.VCC at 40 MHz and 75 MHz, Q = open
NEW: C = 0.1VCC / 0.9.VCC at 40 MHz, 50 MHz and 75 MHz, Q = open
OLD: C = 0.1VCC / 0.9.VCC at 25 MHz, Q = open
NEW: C = 0.1VCC / 0.9.VCC at 25 MHz and 33 MHz, Q = open
– Table 14: Icc3 Operating Current (READ) ' change on section Test Condition
OLD: C = 0.1VCC / 0.9.VCC at 25 MHz, Q = open
NEW: C = 0.1VCC / 0.9.VCC at 25 MHz and 75 MHz, Q = open
OLD: C = 0.1VCC / 0.9.VCC at 20 MHz, Q = open
NEW: C = 0.1VCC / 0.9.VCC at 20 MHz and 33 MHz, Q = open
– Table 15: this is valid also for grade 3:
OLD: Instruction times, process technology T9HX(1) (device grade 6)
NEW: Instruction times, process technology T9HX(1)
– Table 16: this is valid also for grade 3:
OLD: Instruction times, process technology T7Y(1) (device grade 6)
NEW: Instruction times, process technology T7Y(1)
– Table 17: with last 2 previous modifications it is possible to remove it
– Table 19: Insert in heading:” identified with device belonging to X technology
version;” Change tRES1 = 30us & tRES2 = 30us (remove 3us & 1.8us & note 5)
14-May-2009
18
Revised cross references in Table 11.: Device grade and AC table correlation.
Table 28.
Document revision history (continued)
Date
Revision
Changes
相关PDF资料 |
PDF描述 |
|---|---|
| M25P40VMF6 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40VMF6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40VMF6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40VMF6T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40VMF6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25P40VMN6TP | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P40-VMN6TP | 功能描述:闪存 SERIAL SECTOR ERASE FLASH 4MEG RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M25P40-VMN6TP/X | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface |
| M25P40-VMN6TP_NUD | 制造商:Micron Technology Inc 功能描述: |
| M25P40-VMN6TPB | 功能描述:IC FLASH 4MBIT 75MHZ 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:Forté™ 标准包装:2,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:256K (32K x 8) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:28-TSSOP（0.465"，11.8mm 宽） 供应商设备封装:28-TSOP 包装:带卷 (TR) 其它名称:71V256SA15PZGI8 |
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