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参数资料
| 型号： | M25P40-VMN6TG/X |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 512K X 8 SPI BUS SERIAL EEPROM, PDSO8 |
| 封装： | 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8 |
| 文件页数： | 29/57页 |
| 文件大小： | 1160K |
| 代理商： | M25P40-VMN6TG/X |
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M25P40
Power-up and Power-down
35/57
7
Power-up and Power-down
At Power-up and Power-down, the device must not be selected (that is Chip Select (S) must
follow the voltage applied on VCC) until VCC reaches the correct value:
VCC(min) at Power-up, and then for a further delay of tVSL
VSS at Power-down
A safe configuration is provided in Section 3: SPI modes.
To avoid data corruption and inadvertent write operations during power-up, a Power On
Reset (POR) circuit is included. The logic inside the device is held reset while VCC is less
than the Power On Reset (POR) threshold voltage, VWI – all operations are disabled, and
the device does not respond to any instruction.
Moreover, the device ignores all Write Enable (WREN), Page Program (PP), Sector Erase
(SE), Bulk Erase (BE) and Write Status Register (WRSR) instructions until a time delay of
tPUW has elapsed after the moment that VCC rises above the VWI threshold. However, the
correct operation of the device is not guaranteed if, by this time, VCC is still below VCC(min).
No Write Status Register, Program or Erase instructions should be sent until the later of:
tPUW after VCC passed the VWI threshold
tVSL after VCC passed the VCC(min) level
These values are specified in Table 9.
If the delay, tVSL, has elapsed, after VCC has risen above VCC(min), the device can be
selected for READ instructions even if the tPUW delay is not yet fully elapsed.
At Power-up, the device is in the following state:
The device is in the Standby Power mode (not the Deep Power-down mode).
The Write Enable Latch (WEL) bit is reset.
The Write In Progress (WIP) bit is reset.
Normal precautions must be taken for supply rail decoupling, to stabilize the VCC supply.
Each device in a system should have the VCC rail decoupled by a suitable capacitor close to
the package pins. (Generally, this capacitor is of the order of 100 nF).
At Power-down, when VCC drops from the operating voltage, to below the Power On Reset
(POR) threshold voltage, VWI, all operations are disabled and the device does not respond
to any instruction. (The designer needs to be aware that if a Power-down occurs while a
Write, Program or Erase cycle is in progress, some data corruption can result.)
相关PDF资料 |
PDF描述 |
|---|---|
| M25P40VMF6 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40VMF6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40VMF6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40VMF6T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40VMF6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25P40VMN6TP | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P40-VMN6TP | 功能描述:闪存 SERIAL SECTOR ERASE FLASH 4MEG RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M25P40-VMN6TP/X | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface |
| M25P40-VMN6TP_NUD | 制造商:Micron Technology Inc 功能描述: |
| M25P40-VMN6TPB | 功能描述:IC FLASH 4MBIT 75MHZ 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:Forté™ 标准包装:2,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:256K (32K x 8) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:28-TSSOP（0.465"，11.8mm 宽） 供应商设备封装:28-TSOP 包装:带卷 (TR) 其它名称:71V256SA15PZGI8 |
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