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参数资料
| 型号： | M25P40-VMN6TG/X |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 512K X 8 SPI BUS SERIAL EEPROM, PDSO8 |
| 封装： | 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8 |
| 文件页数： | 50/57页 |
| 文件大小： | 1160K |
| 代理商： | M25P40-VMN6TG/X |
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Revision history
M25P40
54/57
13
Revision history
Table 28.
Document revision history
Date
Revision
Changes
12-Apr-2001
1.0
Document written.
25-May-2001
1.1
Serial Paged Flash Memory renamed as Serial Flash Memory.
11-Sep-2001
1.2
Changes to text: Signal Description/Chip Select; Hold Condition/1st para; Protection
modes; Release from Power-down and Read Electronic Signature (RES); Power-
up.
Repositioning of several tables and illustrations without changing their contents.
Power-up timing illustration; SO8W package removed.
Changes to tables: Abs Max Ratings/VIO; DC Characteristics/VIL.
16-Jan-2002
1.3
FAST_READ instruction added. Document revised with new timings, VWI, ICC3 and
clock slew rate. Descriptions of Polling, Hold Condition, Page Programming,
Release for Deep Power-down made more precise. Value of tW(max) modified.
12-Sep-2002
1.4
Clarification of descriptions of entering Standby Power mode from Deep Power-
down mode, and of terminating an instruction sequence or data-out sequence.
VFQFPN8 package (MLP8) added. Document promoted to Preliminary Data.
13-Dec-2002
1.5
Typical Page Program time improved. Deep Power-down current changed. Write
Protect setup and hold times specified, for applications that switch Write Protect to
exit the Hardware Protection mode immediately before a WRSR, and to enter the
Hardware Protection mode again immediately after.
12-Jun-2003
1.6
Document promoted from Preliminary Data to full Datasheet.
24-Nov-2003
2.0
Table of contents, warning about exposed paddle on MLP8, and Pb-free options
added.
40 MHz AC Characteristics table included as well as 25 MHz. ICC3(max), tSE(typ)
and tBE(typ) values improved. Change of naming for VDFPN8 package.
12-Mar-2004
3.0
Automotive range added. Soldering temperature information clarified for RoHS
compliant devices.
05-Aug-2004
4.0
Device grade information clarified. Data-retention measurement temperature
corrected. Details of how to find the date of marking added.
03-Jan-2005
5.0
Small text changes. Notes 2 and 3 removed from Table 27: Ordering information
.
01-Aug-2005
6.0
Updated Page Program (PP) instructions in Page Programming, Page Program
24-Oct-2005
7.0
50 MHz operation added (see Table 20: AC characteristics (50 MHz operation,
). All packages are RoHS compliant. Blank option
removed from under Plating technology in Table 27: Ordering information scheme.
MLP package renamed as VFQFPN, silhouette and package mechanical drawing
updated (see on page 1 and Figure 29: VFQFPN8 (MLP8) 8-lead Very thin Fine
.
相关PDF资料 |
PDF描述 |
|---|---|
| M25P40VMF6 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40VMF6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40VMF6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40VMF6T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40VMF6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25P40VMN6TP | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P40-VMN6TP | 功能描述:闪存 SERIAL SECTOR ERASE FLASH 4MEG RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M25P40-VMN6TP/X | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface |
| M25P40-VMN6TP_NUD | 制造商:Micron Technology Inc 功能描述: |
| M25P40-VMN6TPB | 功能描述:IC FLASH 4MBIT 75MHZ 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:Forté™ 标准包装:2,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:256K (32K x 8) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:28-TSSOP（0.465"，11.8mm 宽） 供应商设备封装:28-TSOP 包装:带卷 (TR) 其它名称:71V256SA15PZGI8 |
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