参数资料
型号: M25P40-VMN6TG/X
厂商: NUMONYX
元件分类: PROM
英文描述: 512K X 8 SPI BUS SERIAL EEPROM, PDSO8
封装: 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
文件页数: 30/57页
文件大小: 1160K
代理商: M25P40-VMN6TG/X
Power-up and Power-down
M25P40
36/57
Figure 20.
Power-up timing
Table 8.
Power-up timing and VWI threshold
Symbol
Parameter
Min.
Max.
Unit
tVSL(1)
1. These parameters are characterized only.
VCC(min) to S low
10
μs
tPUW(1)
Time delay to Write instruction
1
10
ms
VWI(1)
Write Inhibit voltage (device grade 6)
1
2.1
V
Write Inhibit voltage (device grade 3)
1
2.1
V
VCC
AI04009C
VCC(min)
VWI
Reset State
of the
Device
Chip Selection Not Allowed
Program, Erase and Write Commands are Rejected by the Device
tVSL
tPUW
time
Read Access allowed
Device fully
accessible
VCC(max)
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