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参数资料
| 型号： | M6MGB166S2BWG |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP |
| 中文描述： | 3.3的CMOS只快闪记忆体 |
| 文件页数： | 1/30页 |
| 文件大小： | 253K |
| 代理商： | M6MGB166S2BWG |
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Nov 1999 , Rev.2.3
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM
Stacked-CSP (Chip Scale Package)
M6MGB/T166S2BWG
1
DESCRIPTION
The MITSUBISHI M6MGB/T166S2BWG is a Stacked Chip
Scale Package (S-CSP) that contents 16M-bits flash
memory and 2M-bits Static RAM in a 72-pin S-CSP.
16M-bits Flash memory is a 1,048,576 words, 3.3V-only,
and high performance non-volatile memory fabricated by
CMOS technology for the peripheral circuit and
DINOR(DIvided bit-line NOR) architecture for the memory
cell.
2M-bits SRAM is a 131,072words unsynchronous SRAM
fabricated by silicon-gate CMOS technology.
M6MGB/T166S2BWG is suitable for the application of the
mobile-communication-system to reduce both the mount
space and weight .
Access time
Flash Memory 90ns (Max.)
SRAM 85ns (Max.)
Supply voltage Vcc=2.7 ~ 3.6V
Ambient temperature
I version Ta=-40 ~ 85
°
C
Package : 72-pin S-CSP , 0.8mm ball pitch
APPLICATION
Mobile communication products
FEATURES
PIN CONFIGURATION (TOP VIEW)
F-VCC
S-VCC
:Vcc for Flash
:Vcc for SRAM
F-GND
GND
:GND for Flash
:Flash/SRAM common GND
A0-A16
:Flash/SRAM
common Address
F-A17-F-A19 :Address for Flash
DQ0-DQ15
:Flash/SRAM
common Data I/O
F-CE#
:Flash Chip Enable
S-CE1#
S-CE2
F-OE#
S-OE#
:SRAM Chip Enable 1
:SRAM Chip Enable 2
:Flash Output Enable
:SRAM Output Enable
F-WE#
S-WE#
:Flash Write Enable
:SRAM Write Enable
F-WP#
F-RP#
F-RY/BY#
S-LB#
S-UB#
:Flash Write Protect
:Flash Reset Power Down
:Flash Ready /Busy
:SRAM Lower Byte
:SRAM Upper Byte
NC:Non Connection
DU:Don't Use (Note: Should be open)
1
8.0 mm
1
2
3
4
5
6
7
8
A
B
C
D
E
F
G
H
I
J
K
L
NC
NC
DU
A5
A4
A0
F-CE#
DU
NC
NC
A7
A6
A3
A1
A2
F-A17
F-A18
DU
DQ9
DQ8
DQ0
NC
F-WP#
F-A19
DQ11
DU
DQ10
GND
S-VCC
DU
DU
DQ4
F-VCC
F-WE#
F-RP#
DQ6
DQ5
A10
A9
NC
NC
NC
A11
A15
A14
DU
NC
NC
F-OE#
F-
RY/BY#
DQ13
S-WE#
DQ14
F-GND
INDEX (Laser Marking)
F-GND
CE1#
S-
S-LB#
S-UB#
S-OE#
DQ1
DQ2
DQ3
DQ12
CE2
S-
DU
A16
A13
A12
A8
DQ15
DQ7
NC
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M6MGB166S4BWG | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
| M6MGB331S4BKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B |
| M6MGB331S8AKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGB331S8BKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGD137W34DWG | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
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