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| 型号： | M6MGB166S2BWG |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP |
| 中文描述： | 3.3的CMOS只快闪记忆体 |
| 文件页数： | 30/30页 |
| 文件大小： | 253K |
| 代理商： | M6MGB166S2BWG |
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Nov 1999 , Rev.2.3
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM
Stacked-CSP (Chip Scale Package)
M6MGB/T166S2BWG
POWER DOWN CHARACTERISTICS
t
su (PD)
t
rec (PD)
ns
ms
(2) TIMING REQUIREMINTS
Symbol
Parameter
Test conditions
Limits
Typ
Min
0
5
Max
Units
Power down set up time
Power down recovery time
30
(1) ELECTRICAL CHARACTERISTICS
(3) TIMING DIAGRAM
2.2V
t
su (PD)
2.7V
2.7V
2.2V
t
rec (PD)
S-LB#,S-UB#>
S-Vcc
S-LB#,
S-UB#
S-LB#,S-UB# control mode
2.2V
t
su (PD)
2.7V
2.7V
2.2V
t
rec (PD)
S-Vcc
S-CE1#
S-CE1# control mode
S-CE1# >
S-Vcc
S-CE2 control mode
0.2V
t
su (PD)
2.7V
2.7V
0.2V
t
rec (PD)
S-CE2
S-CE2<
V
V
V
V
2.0
2.0
2.0
S-Vcc
(PD)
V
I (S-BC)
V
I (S-CE1#)
V
I (S-CE2)
Symbol
Parameter
Test conditions
Limits
Typ
Min
Max
Units
Power down supply voltage
Byte control input S-LB#,S-UB#
Typical value is for Ta=25
°
C
Icc
(PD)
+25 ~ +40
°
C
-I
8
1
3
-
-
24
-
-
-
m
A
Power down
supply current
+40 ~ +70
°
C
+70 ~ +85
°
C
Chip enable input S-CE1#
Chip enable input S-CE2
0.2
m
A
m
A
S-Vcc=3.0V
S-CE2 0.2V
other inputs=0~3V
- 40 ~ +25
°
C
-
0.3
1
m
A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M6MGB166S4BWG | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
| M6MGB331S4BKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B |
| M6MGB331S8AKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGB331S8BKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGD137W34DWG | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
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