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参数资料
| 型号： | M6MGB166S2BWG |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP |
| 中文描述： | 3.3的CMOS只快闪记忆体 |
| 文件页数： | 9/30页 |
| 文件大小： | 253K |
| 代理商： | M6MGB166S2BWG |
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Nov 1999 , Rev.2.3
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM
Stacked-CSP (Chip Scale Package)
M6MGB/T166S2BWG
9
*The F-RY/BY# is an open drain output pin and indicates status of the internal WSM. When low,it indicates that the WSM is Busy performing an operation.
A pull-up resistor of 10K-100K Ohms is required to allow the F-RY/BY# signal to transition high indicating a Ready WSM condition.
*DQ3 indicates the block status after the page programming, word programming and page buffer to flash. When DQ3 is "1", the page has the over-programed
cell . If over-program occurs, the device is block fail. However if DQ3 is "1", please try the block erase to the block. The block may revive.
STATUS REGISTER
Status
Erase Status
Program Status
Block Status after Program
Reserved
Definition
Symbol
(DQ
5
)
(DQ
4
)
(DQ
3
)
(DQ
2
)
Write State Machine Status
Suspend Status
(DQ
7
)
(DQ
6
)
(DQ
1
)
(DQ
0
)
"1"
"0"
Busy
Ready
Suspended
Error
Error
Error
-
Operation in Progress / Completed
Successful
Successful
Successful
-
SR.5
SR.4
SR.3
SR.2
SR.7
SR.6
SR.1
SR.0
Reserved
-
-
Reserved
-
-
BLOCK LOCKING
Deep Power Down Mode
Write Protection Provided
BANK(I)
Parameter
Locked
Locked
Locked
Unlocked Unlocked Unlocked Unlocked
Locked
Lock
Bit
(Internally)
X
0
1
X
Lock Bit
Boot
Data
Locked
Locked
Locked
Locked
Locked
Note
BANK(II)
V
IL
F-RP# F-WP#
X
All Blocks Unlocked
Locked
Unlocked Unlocked
V
IH
V
IL
V
IH
1) DQ
6
provides Lock Status of each block after writing the Read Lock Status command (71H).
F-WP# pins must not be switched during performing Erase / Write operations or WSM Busy (WSMS = 0).
2) Erase/Write command for locked blocks is aborted. At this time read mode is not array read mode but status read mode and
00B0H is read. Please issue Clear Status Register command plus Read Array command to change the mode from status read mode
to array read mode.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M6MGB166S4BWG | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
| M6MGB331S4BKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B |
| M6MGB331S8AKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGB331S8BKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGD137W34DWG | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
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