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参数资料
| 型号： | M6MGB166S2BWG |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP |
| 中文描述： | 3.3的CMOS只快闪记忆体 |
| 文件页数： | 22/30页 |
| 文件大小： | 253K |
| 代理商： | M6MGB166S2BWG |
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Nov 1999 , Rev.2.3
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM
Stacked-CSP (Chip Scale Package)
M6MGB/T166S2BWG
22
SUSPEND / RESUME FLOW CHART
START
WRITE B0H
OPERATION
RESUMED
SR.6 =1
YES
NO
WRITE FFH
READ ARRAY DATA
DONE
READING
NO
YES
WRITE D0H
SUSPEND
RESUME
BLOCK ERASE FLOW CHART
START
WRITE 20H
WRITE D0H
BLOCK ADDRESS
FULL STATUS CHECK
IF DESIRED
YES
SR.7 = 1
WRITE B0H
YES
NO
SUSPEND LOOP
WRITE D0H
YES
NO
STATUS REGISTER
READ
BLOCK ERASE
COMPLETED
STATUS REGISTER
READ
SR.7 = 1
YES
NO
PROGRAM / ERASE
COMPLETED
* The bank address is required when writing this command. Also, there is
no need to suspend the erase or program operation when reading data
from the other bank. Please use BGO function.
SINGLE DATA LOAD TO PAGE BUFFER
START
WRITE 74H
FULL STATUS CHECK
IF DESIRED
PAGE BUFFER TO FLASH
COMPLETED
WRITE
ADDRESS , DATA
WRITE B0H
YES
NO
SUSPEND LOOP
WRITE D0H
YES
NO
STATUS REGISTER
READ
WRITE 0EH
WRITE D0H
PAGE ADDRESS
SR.7 = 1
YES
DONE
LOADING
NO
SINGLE DATA LOAD
TO PAGE BUFFER
COMPLETED
PAGE BUFFER TO FLASH
START
CLEAR PAGE BUFFER
START
WRITE 55H
WRITE D0H
PAGE BUFFER CLEAR
COMPLETED
相关PDF资料 |
PDF描述 |
|---|---|
| M6MGT166S2BWG | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP |
| M74LS96P | 5-Bit Shift Register |
| M81700FP | HIGH VOLTAGE HALF BRIDGE DRIVER |
| M81701FP | SA-215-08 PERMASEAL FLANGED SPADE |
| M83 | SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M6MGB166S4BWG | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
| M6MGB331S4BKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B |
| M6MGB331S8AKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGB331S8BKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGD137W34DWG | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
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