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参数资料
| 型号： | M6MGB166S2BWG |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP |
| 中文描述： | 3.3的CMOS只快闪记忆体 |
| 文件页数： | 21/30页 |
| 文件大小： | 253K |
| 代理商： | M6MGB166S2BWG |
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Nov 1999 , Rev.2.3
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM
Stacked-CSP (Chip Scale Package)
M6MGB/T166S2BWG
21
FULL STATUS CHECK PROCEDURE
SR.5 = 0
SR.4 = 0
SR.4 =1
and
SR.5 =1
SUCCESSFUL
(BLOCK ERASE, PROGRAM)
YES
YES
YES
NO
STATUS REGISTER
READ
COMMAND SEQUENCE ERROR
NO
BLOCK ERASE ERROR
NO
PROGRAM ERROR
(BLOCK)
WRITE 77H
WRITE D0H
BLOCK ADDRESS
LOCK BIT PROGRAM FLOW CHART
SR.4 = 0
LOCK BIT PROGRAM
SUCCESSFUL
YES
YES
NO
NO
START
LOCK BIT PROGRAM
FAILED
SR.7 = 1
SR.3 = 0
YES
NO
PROGRAM ERROR
(PAGE, LOCK BIT)
PAGE PROGRAM FLOW CHART
START
WRITE 41H
FULL STATUS CHECK
IF DESIRED
PAGE PROGRAM
COMPLETED
YES
n = 0
n = n+1
WRITE
ADDRESS n, DATA n
YES
SR.7 = 1
n = FFH
or
n = 7FH
NO
WRITE B0H
YES
NO
SUSPEND LOOP
WRITE D0H
YES
NO
STATUS REGISTER
READ
WORD PROGRAM FLOW CHART
START
WRITE 40H
FULL STATUS CHECK
IF DESIRED
WORD PROGRAM
COMPLETED
YES
WRITE
ADDRESS , DATA
SR.7 = 1
WRITE B0H
YES
NO
SUSPEND LOOP
WRITE D0H
YES
NO
STATUS REGISTER
READ
* Word program is admitted to only BANK(I).
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PDF描述 |
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| M81700FP | HIGH VOLTAGE HALF BRIDGE DRIVER |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M6MGB166S4BWG | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
| M6MGB331S4BKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B |
| M6MGB331S8AKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGB331S8BKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGD137W34DWG | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
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