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参数资料
| 型号： | M6MGB166S2BWG |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP |
| 中文描述： | 3.3的CMOS只快闪记忆体 |
| 文件页数： | 3/30页 |
| 文件大小： | 253K |
| 代理商： | M6MGB166S2BWG |
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Nov 1999 , Rev.2.3
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM
Stacked-CSP (Chip Scale Package)
M6MGB/T166S2BWG
3
DESCRIPTION
The Flash Memory of M6MGB/T166S2BWG is 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating
BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank
while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for mobile and
personal computing, and communication products. The Flash Memory of M6MGB/T166S2BWG is fabricated by CMOS technology for the
peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells.
FEATURES
Boot Block
M6MGB166S2BWG Bottom Boot
M6MGT166S2BWG Top Boot
Other Functions
Soft Ware Command Control
Selective Block Lock
Erase Suspend/Resume
Program Suspend/Resume
Status Register Read
Alternating Back Ground Program/Erase Operation
Between Bank(I) and Bank(II)
Auto Power Down Mode
Organization 1048,576 word x 16bit
Supply voltage
................................
V
CC
= 2.7~3.6V
Access time 90ns (Max.)
Power Dissipation
Read 54 mW (Max. at 5MHz)
(After Automatic Power Down) 0.33
m
W (typ.)
Program/Erase 126 mW (Max.)
Standby 0.33
m
W (typ.)
Deep power down mode 0.33
m
W (typ.)
Auto program for Bank(I)
Program Time 4ms (typ.)
Program Unit
(Byte Program) 1word
(Page Program) 128word
Auto program for Bank(II)
Program Time 4ms (typ.)
Program Unit 128word
Auto Erase
Erase time 40 ms (typ.)
Erase Unit
Bank(I) Boot Block 16Kword x 1
Parameter Block 16Kword x 7
Bank(II) Main Block 32Kword x 28
Program/Erase cycles 100Kcycles
1. Flash Memory
相关PDF资料 |
PDF描述 |
|---|---|
| M6MGT166S2BWG | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP |
| M74LS96P | 5-Bit Shift Register |
| M81700FP | HIGH VOLTAGE HALF BRIDGE DRIVER |
| M81701FP | SA-215-08 PERMASEAL FLANGED SPADE |
| M83 | SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M6MGB166S4BWG | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
| M6MGB331S4BKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B |
| M6MGB331S8AKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGB331S8BKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGD137W34DWG | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
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