- 您现在的位置：买卖IC网 > PDF目录370994 > M6MGB166S2BWG (Mitsubishi Electric Corporation) CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP PDF资料下载
参数资料
| 型号： | M6MGB166S2BWG |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP |
| 中文描述： | 3.3的CMOS只快闪记忆体 |
| 文件页数： | 13/30页 |
| 文件大小： | 253K |
| 代理商： | M6MGB166S2BWG |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页当前第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页
Nov 1999 , Rev.2.3
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM
Stacked-CSP (Chip Scale Package)
M6MGB/T166S2BWG
13
3.3V
GND
F-V
CC
Vcc POWER UP / DOWN TIMING
V
IH
V
IL
F-RP#
Read /Write Inhibit
t
VCS
V
IH
V
IL
F-CE#
V
IH
V
IL
F-WE#
t
PS
t
PS
Read /Write Inhibit
Read /Write Inhibit
TEST CONDITIONS
FOR AC CHARACTERISTICS
Input voltage : V
IL
= 0V, V
IH
= 3.0V
Input rise and fall times :
￡
5ns
Reference voltage
at timing measurement : 1.5V
Output load : 1TTL gate +
CL(30pF)
or
AC WAVEFORMS FOR READ OPERATION AND TEST CONDITIONS
OUTPUT VALID
HIGH-Z
t
DF(OE)
t
RC
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
ADDRESSES
F-CE#
F-OE#
F-WE#
DATA
ADDRESS VALID
t
OH
t
OLZ
t
a (CE)
t
OEH
t
CLZ
t
a (AD)
t
a (OE)
HIGH-Z
DUT
3.3k
W
1N914
1.3V
C
L
=30pF
V
IH
V
IL
F-RP#
t
PS
t
DF(CE)
t
PHZ
t
RE
AC WAVEFORMS FOR WRITE FFH or 71H AND READ OPERATION
OUTPUT VALID
HIGH-Z
t
DF(OE)
t
RC
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
ADDRESSES
F-CE#
F-OE#
F-WE#
DATA
ADDRESS VALID
t
OH
t
OLZ
t
a (CE)
t
RE
t
CLZ
t
a (AD)
t
a (OE)
HIGH-Z
V
IH
V
IL
F-RP#
t
PS
t
DF(CE)
t
PHZ
Valid
FFH or 71H
In the case of application F-CE# is Low fixed, it is allowed to define a timming specification of tRE
from rising edge of F-WE# to falling edge of F-OE#, and valid data is read after spec of tRE+ta(CE).
(This is only for FFH,71H program and read)
相关PDF资料 |
PDF描述 |
|---|---|
| M6MGT166S2BWG | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP |
| M74LS96P | 5-Bit Shift Register |
| M81700FP | HIGH VOLTAGE HALF BRIDGE DRIVER |
| M81701FP | SA-215-08 PERMASEAL FLANGED SPADE |
| M83 | SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M6MGB166S4BWG | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
| M6MGB331S4BKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B |
| M6MGB331S8AKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGB331S8BKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGD137W34DWG | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
发布紧急采购，3分钟左右您将得到回复。