参数资料
型号: M6MGB166S2BWG
厂商: Mitsubishi Electric Corporation
英文描述: CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
中文描述: 3.3的CMOS只快闪记忆体
文件页数: 29/30页
文件大小: 253K
代理商: M6MGB166S2BWG
Nov 1999 , Rev.2.3
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM
Stacked-CSP (Chip Scale Package)
M6MGB/T166S2BWG
29
Write cycle (S-CE1# control mode)
t
h
(D)
t
su
(D)
DQ
0~15
t
su
(CE1)
t
rec
(W)
t
su
(A)
t
CW
A
0~16
S-WE#
S-CE1#
DATA IN
STABLE
(Note3)
(Note3)
(Note4)
(Note5)
(Note3)
(Note3)
S-LB#,
S-UB#
(Note3)
(Note3)
S-CE2
t
h
(D)
t
su
(D)
DQ
0~15
t
su
(CE2)
t
rec
(W)
t
su
(A)
t
CW
A
0~16
S-WE#
S-CE1#
Write cycle (S-CE2 control mode)
DATA IN
STABLE
(Note3)
(Note3)
(Note4)
(Note5)
(Note3)
(Note3)
S-LB#,
S-UB#
(Note3)
(Note3)
S-CE2
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M6MGB331S8AKT 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
M6MGB331S8BKT 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
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