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参数资料
| 型号： | M6MGB166S2BWG |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP |
| 中文描述： | 3.3的CMOS只快闪记忆体 |
| 文件页数： | 18/30页 |
| 文件大小： | 253K |
| 代理商： | M6MGB166S2BWG |
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Nov 1999 , Rev.2.3
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM
Stacked-CSP (Chip Scale Package)
M6MGB/T166S2BWG
18
AC WAVEFORMS FOR WORD PROGRAM OPERATION WITH BGO (F-WE# control)
ARRAY READ FROM BANK(II) WITH BGO
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IH
ADDRESS VALID
F-CE#
F-OE#
F-WE#
DATA
F-RY/BY#
V
IH
V
IL
V
IL
V
IH
V
IL
V
IL
40H
DIN
SRD
DOUT
VALID
VALID
VALID
VALID
t
WC
t
AS
t
AH
t
CS
t
CH
t
WPH
t
WP
t
DS
t
DH
t
WHRL
t
a(CE)
t
a(OE)
t
OEH
DOUT
PROGRAM DATA TO
BANK(I)
VALID
READ STATUS
REGISTER
Change Bank Address
F-A19~F-A17,
A16~A7
A6 ~A0
BAN VALID
AC WAVEFORMS FOR WORD PROGRAM OPERATION WITH BGO (F-CE# control)
Change Bank Address
ARRAY READ FROM BANK(II) WITH BGO
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IH
F-CE#
F-OE#
F-WE#
DATA
F-RY/BY#
V
IH
V
IL
V
IL
V
IH
V
IL
V
IL
40H
DIN
SRD
DOUT
VALID
VALID
VALID
VALID
t
WC
t
AS
t
WS
t
CH
t
CEPH
t
CEP
t
DS
t
DH
t
EHRL
t
a(CE)
t
a(OE)
t
OEH
DOUT
PROGRAM DATA TO
BANK(I)
VALID
ADDRESS VALID
READ STATUS
REGISTER
A6 ~A0
BAN VALID
F-A19~F-A17,
A16~A7
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| M81701FP | SA-215-08 PERMASEAL FLANGED SPADE |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M6MGB166S4BWG | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
| M6MGB331S4BKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B |
| M6MGB331S8AKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGB331S8BKT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| M6MGD137W34DWG | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
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