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参数资料
| 型号： | MAX1545ETL+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 35/43页 |
| 文件大小： | 0K |
| 描述： | IC QUICK-PWM DUAL-PHASE 40-TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 系列： | Quick-PWM™ |
| 应用： | 控制器，Intel Pentium? IV |
| 输入电压： | 2 V ~ 28 V |
| 输出数： | 1 |
| 输出电压： | 0.6 V ~ 1.85 V |
| 工作温度： | -40°C ~ 100°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 40-WFQFN 裸露焊盘 |
| 供应商设备封装： | 40-TQFN-EP（6x6） |
| 包装： | 带卷 (TR) |
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Dual-Phase, Quick-PWM Controllers for
Programmable CPU Core Power Supplies
CMN
CMP
MAX1519
MAIN
PHASE
L1
R SENSE
MAX1545
R A
R B
PC BOARD TRACE
ERROR
OAIN+
R FBS
RESISTANCE
CPU SENSE
POINT
COMPARATOR
OAIN-
FB
R F
R A
R B
PC BOARD TRACE
RESISTANCE
Figure 10. Voltage-Positioning Gain
CSP
CSN
SECOND
PHASE
L2
R SENSE
? ? V OUT ? ? ? I LOAD ? 2
? V IN ( MAX ) ? ? ? η TOTAL ?
For the low-side MOSFET (N L ), the worst-case power
dissipation always occurs at maximum input voltage:
PD ( N L RESISTIVE ) = ? 1 ? ? ? ? ? ? R DS ( ON )
?
The worst-case for MOSFET power dissipation occurs
under heavy overloads that are greater than
I LOAD(MAX) but are not quite high enough to exceed
the current limit and cause the fault latch to trip. To pro-
tect against this possibility, you can “overdesign” the
circuit to tolerate:
Boost Capacitors
The boost capacitors (C BST ) selected must be large
enough to handle the gate-charging requirements of
the high-side MOSFETs. Typically, 0.1μF ceramic
capacitors work well for low-power applications driving
medium-sized MOSFETs. However, high-current appli-
cations driving large, high-side MOSFETs require boost
capacitors larger than 0.1μF. For these applications,
select the boost capacitors to avoid discharging the
capacitor more than 200mV while charging the high-
side MOSFET’s gates:
I LOAD = η TOTA ? I VALLEY ( MAX ) +
Δ I INDUCTOR ?
?
?
?
L ?
2
C BST =
N x Q GATE
200 mV
= η TOTAL I VALLEY ( MAX ) + ? LOAD ( MAX )
? I LIR ?
?
?
?
C BST =
= 0 . 24 μ F
2
where I VALLEY(MAX) is the maximum valley current
allowed by the current-limit circuit, including threshold
tolerance and on-resistance variation. The MOSFETs
must have a good size heatsink to handle the overload
power dissipation.
Choose a Schottky diode (D L ) with a forward voltage
low enough to prevent the low-side MOSFET body
diode from turning on during the dead time. As a gen-
eral rule, select a diode with a DC current rating equal
to 1/3 of the load current-per-phase. This diode is
optional and can be removed if efficiency is not critical.
where N is the number of high-side MOSFETs used for
one regulator, and Q GATE is the gate charge specified
in the MOSFET’s data sheet. For example, assume (2)
IRF7811W N-channel MOSFETs are used on the high
side. According to the manufacturer’s data sheet, a sin-
gle IRF7811W has a maximum gate charge of 24nC
(V GS = 5V). Using the above equation, the required
boost capacitance would be:
2 x 24nC
200 mV
Selecting the closest standard value, this example
requires a 0.22μF ceramic capacitor.
______________________________________________________________________________________
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