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参数资料
| 型号： | MB85R256FPFCN-G-BNDE1 |
| 厂商： | Fujitsu Semiconductor America Inc |
| 文件页数： | 5/16页 |
| 文件大小： | 0K |
| 描述： | IC FRAM 256KBIT 150NS 28TSOP |
| 特色产品： | FRAM (Ferroelectric RAM) |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | FRAM（Ferroelectric RAM） |
| 存储容量： | 256K (32K x 8) |
| 速度： | 150ns |
| 接口： | 并联 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 28-TSSOP（0.465"，11.8mm 宽） |
| 供应商设备封装： | 28-TSOP I |
| 包装： | 托盘 |
| 其它名称： | 865-1170 |
MB85R256F
■ ABSOLUTE MAXIMUM RANGES
Parameter
Power supply voltage*
Input voltage*
Output voltage*
Operating temperature
Storage temperature
Symbol
V CC
V IN
V OUT
T A
Tstg
Min
? 0.5
? 0.5
? 0.5
? 40
? 40
Rating
Max
+ 4.0
V CC + 0.5
V CC + 0.5
+ 85
+ 125
Unit
V
V
V
° C
° C
* : These parameters are based on the condition that V SS is 0 V.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Power supply voltage*
High level input voltage*
Low level input voltage*
Operating temperature
Symbol
V CC
V IH
V IL
T A
Min
2.7
V CC × 0.8
? 0.5
? 40
Value
Typ
3.3
?
?
?
Max
3.6
V CC + 0.5
+ 0.6
+ 85
Unit
V
V
V
° C
* : These parameters are based on the condition that V SS is 0 V.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of
the semiconductor device. All of the device's electrical characteristics are warranted when the
device is operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges.
Operation outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented
on the data sheet. Users considering application outside the listed conditions are advised to contact
their representatives beforehand.
DS501-00011-1v0-E
5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MB85R256FPF-G-BNDE1 | 功能描述:IC FRAM 256KBIT 150NS 28SOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G（256M x 16） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6 |
| MB85R256FPNF-G-JNE2 | 制造商:FUJITSU 功能描述: |
| MB85R256FPNF-G-JNERE2 | 制造商:FUJITSU 功能描述: 制造商:FUJITSU 功能描述:IC FRAM 256KBIT 150NS 28SOP |
| MB85R256G | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:256K-bits FRAM LSI using the ferroelectric process and CMOS process technologies |
| MB85R256GPF-G-BNDE1 | 制造商:FUJITSU 功能描述: |
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