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参数资料
| 型号： | MC74AC00DT |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 门电路 |
| 英文描述： | AC SERIES, QUAD 2-INPUT NAND GATE, PDSO14 |
| 封装： | PLASTIC, TSSOP-14 |
| 文件页数： | 16/45页 |
| 文件大小： | 434K |
| 代理商： | MC74AC00DT |
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27
Section 4 – Design Considerations
Today’s system designer is faced with the problem of
keeping ahead when addressing system performance and
reliability. ON Semiconductor’s Advanced CMOS helps
designers achieve these goals.
FACT logic was designed to alleviate many of the
drawbacks that are common to current technology logic
circuits. FACT logic combines the low static power
consumption and the high noise margins of CMOS with a
high fan-out, low input loading and a 50 ohm transmission
line drive capability (comparable to ON Semiconductor’s
FAST bipolar technology family) to offer a complete family
of sub 2-micron SSI and MSI devices.
Performance features such as advanced Schottky speeds
at CMOS power levels, advanced Schottky drive, excellent
noise, ESD and latch-up immunity are characteristics that
designers of state-of-the-art systems require. FACT logic
answers all of these concerns in one family of products. To
fully utilize the advantages provided by FACT, the system
designer should have an understanding of the flexibility as
well as the trade-offs of CMOS design. The following
section discusses common design concerns relative to the
performance and requirements of FACT.
There are six items of interest which need to be evaluated
when implementing FACT devices in new designs:
Thermal Management – circuit performance and long-
term circuit reliability are affected by die temperature.
Interfacing – interboard and technology interfaces,
battery backup and power down or live insert/extract
systems require some special thought.
Transmission Line Driving – FACT has line driving
capabilities superior to all CMOS families and most TTL
families.
Noise effects – As edge rates increase, the probability of
crosstalk and ground bounce problems increases. The
enhanced noise immunity and high threshold levels
improve FACT’s resistance to crosstalk problems.
Board Layout – Prudent board layout will ensure that
most noise effects are minimized.
Power Supplies and Decoupling – Maximize ground and
VCC traces to keep VCC/ground impedance as low as
possible; full ground/VCC planes are best. Decouple any
device driving a transmission line; otherwise add one
capacitor for every package.
Thermal Management
Circuit performance and long-term circuit reliability are
affected by die temperature. Normally, both are improved by
keeping the IC junction temperatures low.
Electrical power dissipated in any integrated circuit is a
source of heat. This heat source increases the temperature of
the die relative to some reference point, normally the
ambient temperature of 25
°C in still air. The temperature
increase, then, depends on the amount of power dissipated
in the circuit and on the net thermal resistance between the
heat source and the reference point. See Section 2 for
calculation of FACT power consumption.
The temperature at the junction is a function of the
packaging and mounting system’s ability to remove heat
generated in the circuit – from the junction region to the
ambient environment. The basic formula for converting
power dissipation to estimated junction temperature is:
TJ = TA + PD(θJC + θCA)(1)
or
TJ = TA + PD(θJA)(2)
where
TJ = maximum junction temperature
TA = maximum ambient temperature
PD = calculated maximum power dissipation including
effects of external loads (see Power Dissipation in
section III).
θJC = average thermal resistance, junction to case
θCA = average thermal resistance, case to ambient
θJA = average thermal resistance, junction to ambient
This ON Semiconductor recommended formula has been
approved by RADC and DESC for calculating a “practical”
maximum
operating
junction
temperature
for
MIL-M-38510 (JAN) devices.
Only two terms on the right side of equation (1) can be
varied by the user – the ambient temperature, and the device
case-to-ambient thermal resistance,
θCA. (To some extent
the device power dissipation can also be controlled, but
under recommended use the VCC supply and loading dictate
a fixed power dissipation.) Both system air flow and the
package mounting technique affect the
θCA thermal
resistance term.
θJC is essentially independent of air flow
and external mounting method, but is sensitive to package
material, die bonding method, and die area.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MC74AC00DTR2 | 功能描述:逻辑门 2-6V Quad 2-Input RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
| MC74AC00DTR2G | 功能描述:逻辑门 2-6V Quad 2-Input NAND RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
| MC74AC00M | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MC74AC00MEL | 功能描述:逻辑门 2-6V Quad 2-Input RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
| MC74AC00MELG | 功能描述:逻辑门 2-6V Quad 2-Input NAND RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
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