参数资料
型号: MCIMX258CJM4
厂商: Freescale Semiconductor
文件页数: 81/153页
文件大小: 0K
描述: MPU IMX25 IND 400-MAPBGA
特色产品: MCIMX25 Applications Processors
标准包装: 90
系列: i.MX25
核心处理器: ARM9
芯体尺寸: 32-位
速度: 400MHz
连通性: 1 线,CAN,EBI/EMI,以太网,I²C,MMC,智能卡,SPI,SSI,UART/USART,USB OTG
外围设备: DMA,I²S,LCD,POR,PWM,WDT
输入/输出数: 128
程序存储器类型: 外部程序存储器
RAM 容量: 144K x 8
电压 - 电源 (Vcc/Vdd): 1.15 V ~ 1.52 V
数据转换器: A/D 3x12b
振荡器型: 外部
工作温度: -40°C ~ 85°C
封装/外壳: 400-LFBGA
包装: 托盘
i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 10
Freescale Semiconductor
33
Output pad propagation delay1 (high drive),
40%–60%
tpo
15 pF
35 pF
1.04/1.09
1.63/1.56
1.73/1.83
2.43/2.52
2.69/2.62
3.79/3.62
ns
Output pad propagation delay1 (standard drive),
40%–60%
tpo
15 pF
35 pF
1.50/1.74
2.73/2.42
2.36/2.41
3.77/3.78
3.67/3.46
5.86/5.37
ns
Output enable to output valid delay1 (max. drive),
50%–50%
tpv
15 pF
35 pF
1.17/1.01
1.43/1.30
1.93/1.61
2.33/2.00
3.06/2.55
3.69/3.13
ns
Output enable to output valid delay1 (high drive),
50%–50%
tpv
15 pF
35 pF
1.38/1.28
1.97/1.92
2.25/1.99
3.16/2.86
3.58/3.10
5.01/4.39
ns
Output enable to output valid delay1 (standard
drive), 50%–50%
tpv
15 pF
35 pF
1.92/1.57
3.12/3.16
3.11/2.79
4.97/4.59
4.98/4.13
7.97/6.98
ns
Output enable to output valid delay1 (max. drive),
40%–60%
tpv
15 pF
35 pF
1.28/1.12
1.49/1.36
2.01/1.70
2.33/2.01
3.09/2.60
3.60/3.06
ns
Output enable to output valid delay1 (high drive),
40%–60%
tpv
15 pF
35 pF
1.43/1.33
1.90/1.84
2.24/1.99
2.96/2.68
3.47/3.02
4.59/4.03
ns
Output enable to output valid delay1 (standard
drive), 40%–60%
tpv
15 pF
35 pF
1.85/1.78
2.80/2.81
2.91/2.62
4.37/4.53
4.54/3.96
6.88/6.05
ns
Output pad slew rate2 (max. drive)
tps
25 pF
50 pF
0.80/0.92
0.43/0.50
1.35/1.50
0.72/0.81
2.23/2.27
1.66/1.68
V/ns
Output pad slew rate2 (high drive)
tps
25 pF
50 pF
0.37/0.43
0.19/0.23
0.62/0.70
0.33/0.37
1.03/1.05
0.75/0.77
V/ns
Output pad slew rate2 (standard drive)
tps
25 pF
50 pF
0.18/0.22
0.10/0.12
0.31/0.35
0.16/0.18
0.51/0.53
0.38/0.39
V/ns
Output pad dI/dt3 (max. drive)
tdit
25 pF
50 pF
64
69
171
183
407
432
mA/ns
Output pad dI/dt3 (high drive)
tdit
25 pF
50 pF
37
39
100
106
232
246
mA/ns
Output pad di/dt3 (standard drive)
tdit
25 pF
50 pF
18
20
50
52
116
123
mA/ns
Input pad transition times4
trfi
1.0 pF
0.07/0.08
0.11/0.13
0.16/0.20
ns
Input pad propagation delay, 50%–50%4
tpi
1.0 pF
0.77/1.00
1.22/1.45
1.89/2.21
ns
Input pad propagation delay, 40%–60%4
tpi
1.0 pF
1.59/1.82
2.04/2.27
2.69/3.01
ns
1 Maximum condition for tpr, tpo, tpi, and tpv: wcs model, 1.1 V, I/O 1.65 V, and 105 °C. Minimum condition for tpr, tpo, and tpv:
bcs model, 1.3 V, I/O 1.95 V and –40 °C. Input transition time from core is 1 ns (20%–80%).
2 Minimum condition for tps: wcs model, 1.1 V, I/O 1.65 V, and 105 °C. tps is measured between VIL to VIH for rising edge and
between VIH to VIL for falling edge.
3 Maximum condition for tdit: bcs model, 1.3 V, I/O 1.95 V, and –40 °C.
4 Maximum condition for tpi and trfi: wcs model, 1.1 V, I/O 1.65 V and 105 °C. Minimum condition for tpi and trfi: bcs model, 1.3 V,
I/O 1.95 V and –40 °C. Input transition time from pad is 5 ns (20%–80%).
Table 24. AC Parameters for Mobile DDR I/O (continued)
Parameter
Symbol
Load
Condition
Min.
Rise/Fall
Typ.
Max.
Rise/Fall
Units
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