参数资料
| 型号： | MCP669T-E/ML |
| 厂商： | Microchip Technology |
| 文件页数： | 17/68页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP QUAD 60MHZ 16QFN |
| 标准包装： | 3,300 |
| 放大器类型： | 通用 |
| 电路数： | 4 |
| 输出类型： | 满摆幅 |
| 转换速率： | 32 V/µs |
| 增益带宽积： | 60MHz |
| 电流 - 输入偏压： | 6pA |
| 电压 - 输入偏移： | 1800µV |
| 电流 - 电源： | 6mA |
| 电流 - 输出 / 通道： | 80mA |
| 电压 - 电源，单路/双路(±)： | 2.5 V ~ 5.5 V，±1.25 V ~ 2.75 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-VQFN 裸露焊盘 |
| 供应商设备封装： | 16-QFN（4x4） |
| 包装： | 带卷 (TR) |
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MCP660/1/2/3/4/5/9
DS22194D-page 24
2009-2012 Microchip Technology Inc.
4.4.2
GAIN PEAKING
Figure 4-8 shows an op amp circuit that represents
non-inverting amplifiers (VM is a DC voltage and VP is
the input) or inverting amplifiers (VP is a DC voltage
and VM is the input). The capacitances CN and CG rep-
resent the total capacitance at the input pins; they
include the op amp’s Common mode input capacitance
(CCM), board parasitic capacitance and any capacitor
placed in parallel.
FIGURE 4-8:
Amplifier with Parasitic
Capacitance.
CG acts in parallel with RG (except for a gain of +1 V/V),
which causes an increase in gain at high frequencies.
CG also reduces the phase margin of the feedback
loop, which becomes less stable. This effect can be
reduced by either reducing CG or RF.
CN and RN form a low-pass filter that affects the signal
at VP. This filter has a single real pole at 1/(2RNCN).
The largest value of RF that should be used, depends
several CG values. Some applications may modify
these values to reduce either output loading or gain
peaking (step response overshoot).
FIGURE 4-9:
Maximum Recommended
RF vs. Gain.
Figure 2-35 and Figure 2-36 show the small signal and
large signal step responses at G = +1 V/V. The unity
gain buffer usually has RF = 0 and RG open.
Figure 2-37 and Figure 2-38 show the small signal and
large signal step responses at G = -1 V/V. Since the
noise gain is 2 V/V and CG 10 pF, the resistors were
chosen to be RF = RG = 401 and RN = 200.
It is also possible to add a capacitor (CF) in parallel with
RF to compensate for the destabilizing effect of CG.
This makes it possible to use larger values of RF. The
conditions for stability are summarized in Equation 4-6.
EQUATION 4-6:
VP
RF
VOUT
RN
CN
VM
RG
CG
MCP66X
1.E+02
1.E+03
1.E+04
1.E+05
110
100
Noise Gain; GN (V/V)
M
axi
m
u
m
R
eco
m
en
d
ed
R
F
(
)
GN > +1 V/V
100
10k
100k
1k
CG = 10 pF
CG = 32 pF
CG = 100 pF
CG = 320 pF
CG = 1 nF
fF fGBWP 2GN2
, GN1 GN2
We need:
GN1
1
RF RG
+
=
GN2
1
CG CF
+
=
fF
12
R
FCF
=
fZ
fF GN1 GN2
=
Given:
fF fGBWP 4GN1
, GN1 GN2
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