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参数资料
型号： MJE18004D2AF
厂商： ON SEMICONDUCTOR
元件分类： 功率晶体管
英文描述： 5 A, 450 V, NPN, Si, POWER TRANSISTOR
封装： PLASTIC, TO-220AB, 3 PIN
文件页数： 23/67页
文件大小： 534K
代理商： MJE18004D2AF
MJE18004D2
3–726
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DIODE CHARACTERISTICS
Forward Diode Voltage
(IEC = 1 Adc)
@ TC = 25°C
@ TC = 125°C
VEC
0.96
0.72
1.5
V
(IEC = 2 Adc)
@ TC = 25°C
@ TC = 125°C
1.15
0.8
1.7
Forward Recovery Time
(IF = 0.4 Adc, di/dt = 10 A/s)
@ TC = 25°C
tfr
440
ns
(IF = 1 Adc, di/dt = 10 A/s)
@ TC = 25°C
335
(IF = 2 Adc, di/dt = 10 A/s)
@ TC = 25°C
335
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
13
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
60
100
pF
Input Capacitance
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
Cib
450
750
pF
SWITCHING CHARACTERISTICS: Resistive Load (D.C.
≤ 10%, Pulse Width = 40 s)
Turn–on Time
IC = 2.5 Adc, IB1 = 0.5 Adc
IB2 = 1 Adc
@ TC = 25°C
ton
500
750
ns
Turn–off Time
IB2 = 1 Adc
VCC = 250 Vdc
@ TC = 25°C
toff
1.1
1.4
s
Turn–on Time
IC = 2 Adc, IB1 = 0.4 Adc
IB2 = 1 Adc
@ TC = 25°C
@ TC = 125°C
ton
100
150
150
ns
Turn–off Time
IB2 = 1 Adc
VCC = 300 Vdc
@ TC = 25°C
@ TC = 125°C
toff
1.15
1.6
1.3
s
Turn–on Time
IC = 2.5 Adc, IB1 = 0.5 Adc
IB2 =0 5Adc
@ TC = 25°C
@ TC = 125°C
ton
120
500
150
ns
Turn–off Time
IB2 = 0.5 Adc
VCC = 300 Vdc
@ TC = 25°C
@ TC = 125°C
toff
1.85
2.6
2.15
s
SWITCHING CHARACTERISTICS: Inductive Load (VCC = 15 V)
Fall Time
IC = 2.5 Adc
I
500
Ad
@ TC = 25°C
@ TC = 125°C
tf
130
300
175
ns
Storage Time
IB1 = 500 mAdc
IB2 = 500 mAdc
VZ = 350 V
@ TC = 25°C
@ TC = 125°C
ts
2.12
2.6
2.4
s
Crossover Time
VZ 350 V
LC = 300 H
@ TC = 25°C
@ TC = 125°C
tc
355
750
500
ns
Fall Time
IC = 2 Adc
I
400
Ad
@ TC = 25°C
@ TC = 125°C
tf
95
230
150
ns
Storage Time
IB1 = 400 mAdc
IB2 = 400 mAdc
VZ = 300 V
@ TC = 25°C
@ TC = 125°C
ts
2.1
2.9
2.4
s
Crossover Time
VZ 300 V
LC = 200 H
@ TC = 25°C
@ TC = 125°C
tc
300
700
450
ns
Fall Time
IC = 1 Adc
I
100
Ad
@ TC = 25°C
@ TC = 125°C
tf
70
100
90
ns
Storage Time
IB1 = 100 mAdc
IB2 = 500 mAdc
VZ = 300 V
@ TC = 25°C
@ TC = 125°C
ts
0.7
1.05
0.9
s
Crossover Time
VZ 300 V
LC = 200 H
@ TC = 25°C
@ TC = 125°C
tc
75
160
120
ns
相关PDF资料
PDF描述
MJE18004D2BA 5 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18004D2BC 5 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18004D2AN 5 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18006AJ 6 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18006AK 6 A, 450 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
MJE18004D2G 功能描述:两极晶体管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE18004G 功能描述:两极晶体管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE18006 功能描述:两极晶体管 - BJT 6A 450V 100W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE18006G 功能描述:两极晶体管 - BJT BIP NPN 8A 450V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE18008 功能描述:两极晶体管 - BJT 8A 450V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
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