收藏本站
参数资料
型号： MJE18004D2AF
厂商： ON SEMICONDUCTOR
元件分类： 功率晶体管
英文描述： 5 A, 450 V, NPN, Si, POWER TRANSISTOR
封装： PLASTIC, TO-220AB, 3 PIN
文件页数： 37/67页
文件大小： 534K
代理商： MJE18004D2AF
Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
Index and Cross Reference
1–6
Motorola Bipolar Power Transistor Device Data
INDEX AND CROSS REFERENCE (continued)
2SA1112
MJE15031
3–684
2SA1197L
MJD117–1
3–558
2SA1197S
MJD117
3–558
2SA1201
MJD32
3–542
2SA1204
MJD32
3–542
2SA1213
MJD32C
3–542
2SA1241
MJD45H11–1
3–550
2SA1242
MJD210–1
3–569
2SA1243
MJD210–1
3–569
2SA1244
MJD45H11–1
3–550
2SA1307
TIP42B
3–883
2SA1314
MJD32
3–542
2SA1328
2N6490
3–132
2SA1329
2N6491
3–132
2SA1357
TIP42B
3–883
2SA1375
MJD350
3–577
2SA1385
MJD2955
3–580
2SA1552
MJD350–1
3–577
2SA1562
MJD210–1
3–569
2SA1568
MJF2955
3–794
2SA1592
MJD32C1
3–542
2SA1593
MJD32C1
3–542
2SA489
TIP32C
3–873
2SA490
TIP32B
3–873
2SA496
2N4918
3–34
2SA505
2N4919
3–34
2SA623
2N4918
3–34
2SA624
2N4919
3–34
2SA626
MJ15016
3–5
2SA627
MJ15016
3–5
2SA633
2N4918
3–34
2SA634
2N4919
3–34
2SA635
2N4919
3–34
2SA636
2N4919
3–34
2SA645
MJE182
3–589
2SA646
2N4919
3–34
2SA647
2N4919
3–34
2SA648
MJ15002
3–497
2SA656
MJ15016
3–5
2SA657
MJ15016
3–5
2SA658
MJ15016
3–5
2SA663
MJ15016
3–5
2SA670
TIP32B
3–873
2SA671
TIP32B
3–873
2SA679
MJ15016
3–5
2SA680
2N5880
3–77
2SA681
MJE253
3–596
2SA682
MJE253
3–596
2SA698
MJE350
3–606
2SA699
2N4918
3–34
2SA700
TIP32B
3–873
2SA703
2N4918
3–34
2SA714
MJ15016
3–5
2SA715
MJE171
3–589
2SA738
MJE171
3–589
2SA755
TIP32B
3–873
2SA756
MJ15016
3–5
2SA757
MJ15016
3–5
2SA758
MJ15016
3–5
2SA768
TIP32B
3–873
2SA769
TIP32C
3–873
2SA770
2N6109
3–101
2SA771
2N6107
3–101
2SA775
TIP32C
3–873
2SA779
2N4918
3–34
2SA780
2N4919
3–34
2SA794
MJE253
3–596
2SA795
MJE253
3–596
2SA807
2N3792
3–25
2SA808
2N3792
3–25
2SA814
TIP32C
3–873
2SA815
TIP32C
3–873
2SA816
TIP32B
3–873
2SA818
MJE350
3–606
2SA835
MJE350
3–606
2SA837
MJ15016
3–5
2SA839
TIP32C
3–873
2SA843
MJE15031
3–684
2SA878
MJ15002
3–497
2SA882
MJ15002
3–497
2SA887
2N4919
3–34
2SA898
MJE350
3–606
2SA899
MJE350
3–606
2SA900
MJE210
3–592
2SA907
MJ15016
3–5
2SA908
MJ15002
3–497
2SA909
MJ15003
3–500
2SA922
2N4918
3–34
2SA939
MJE350
3–606
2SA940
MJE15031
3–684
2SA949
MJE15031
3–684
2SA957
MJE15031
3–684
2SA958
MJE15031
3–684
2SA963
MJE171
3–589
2SA965
MJE15029
3–684
2SA966
TIP32B
3–873
2SA968
MJE15031
3–684
2SA969
MJE15031
3–684
2SA971
2N6609
3–21
2SA980
2N5880
3–77
2SA981
MJ15002
3–497
2SA982
MJ15002
3–497
2SB1020
2N6042
3–89
2SB1022
2N6041
3–89
2SB1024
TIP127
3–900
2SB1047L
MJD117–1
3–558
2SB1047S
MJD117
3–558
2SB1072L
MJD6036–1
3–584
2SB1072S
MJD6036
3–584
2SB1179
MJD6036–1
3–584
2SB1179A
MJD6036–1
3–584
2SB1180
MJD127–1
3–563
2SB1180A
MJD127–1
3–563
2SB1201
MJD45H11–1
3–550
2SB1202
MJD45H11–1
3–550
2SB1203
MJD45H11–1
3–550
2SB1204
MJD45H11–1
3–550
2SB1205
MJD210–1
3–569
2SB1214
MJD6036–1
3–584
2SB1215
MJD45H11–1
3–550
2SB1216
MJD45H11–1
3–550
2SB506
MJ15016
3–5
2SB507
TIP32B
3–873
2SB509
TIP32C
3–873
2SB511
TIP32B
3–873
2SB513
TIP32C
3–873
相关PDF资料
PDF描述
MJE18004D2BA 5 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18004D2BC 5 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18004D2AN 5 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18006AJ 6 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18006AK 6 A, 450 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
MJE18004D2G 功能描述:两极晶体管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE18004G 功能描述:两极晶体管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE18006 功能描述:两极晶体管 - BJT 6A 450V 100W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE18006G 功能描述:两极晶体管 - BJT BIP NPN 8A 450V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE18008 功能描述:两极晶体管 - BJT 8A 450V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*