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参数资料
| 型号： | MJE18004D2AF |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 55/67页 |
| 文件大小： | 534K |
| 代理商： | MJE18004D2AF |
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Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
1–23
Index and Cross Reference
Motorola Bipolar Power Transistor Device Data
INDEX AND CROSS REFERENCE (continued)
MJ4035
MJ11016
3–478
MJ410
3–417
MJ411
MJ423
3–419
MJ413
3–419
MJ423
3–419
MJ4237
MJ15012
3–502
MJ4238
MJ15012
3–502
MJ4247
MJ15011
3–502
MJ4248
MJ15011
3–502
MJ425
BUX48A
3–401
MJ431
MJ423
3–419
MJ4360
MJE13002
3–655
MJ4361
MJE13003
3–655
MJ4380
MJE13005
3–661
MJ4381
MJE13005
3–661
MJ4400
MJE13005
3–661
MJ4401
MJE13005
3–661
MJ4502
3–431
MJ480
2N3055
3–2
MJ481
2N3055
3–2
MJ490
2N3792
3–25
MJ491
2N3792
3–25
MJ701
BU208A
3–226
MJ702
BU208A
3–226
MJ704
BU208A
3–226
MJ721
BU208A
3–226
MJ723
BU208A
3–226
MJ802
3–421
MJ804
BU208A
3–226
MJ8500
BU208A
3–226
MJ8501
BU208A
3–226
MJ8502
BU208A
3–226
MJ8503
BU208A
3–226
MJ8504
MJ16018
3–520
MJ8505
MJ16018
3–520
MJD112
3–558
MJD112–1
3–558
MJD117
3–558
MJD117–1
3–558
MJD117RL
MJD117T4
3–558
MJD122
3–563
MJD122–1
3–563
MJD127
3–563
MJD127–1
3–563
MJD127RL
MJD127T4
3–563
MJD200
3–569
MJD200–1
3–569
MJD210
3–569
MJD210–1
3–569
MJD210RL
MJD210T4
3–569
MJD243
3–573
MJD243–1
3–573
MJD253
—
MJD253–1
—
MJD29
MJD31
3–542
MJD29–1
MJD31–1
3–542
MJD2955
3–580
MJD2955–1
3–580
MJD2955RL
MJD2955T4
3–580
MJD29C
MJD31C
3–542
MJD29C1
MJD31C1
3–542
MJD30
MJD32
3–542
MJD30–1
MJD32–1
3–542
MJD3055
3–580
MJD3055–1
3–580
MJD30C
MJD32C
3–542
MJD30C1
MJD32C1
3–542
MJD31
3–542
MJD31–1
3–542
MJD31C
3–542
MJD31C1
3–542
MJD32
3–542
MJD32–1
3–542
MJD32C
3–542
MJD32C1
3–542
MJD32CRL
MJD32CT4
3–542
MJD32RL
—
MJD340
3–577
MJD340–1
3–577
MJD350
3–577
MJD350–1
3–577
MJD350RL
MJD350T4
3–577
MJD41C
3–546
MJD41C1
3–546
MJD42C
3–546
MJD42C–1
3–546
MJD42CRL
MJD42CT4
3–546
MJD44H11
3–550
MJD44H11–1
3–550
MJD45H11
3–550
MJD45H11–1
3–550
MJD45H11RL
MJD45H11T4
3–550
MJD47
3–554
MJD47–1
3–554
MJD50
3–554
MJD50–1
3–554
MJD6036
3–584
MJD6036–1
3–584
MJD6036RL
MJD6036T4
3–584
MJD6039
3–584
MJD6039–1
3–584
MJE101
MJE2955T
3–628
MJE102
MJE2955T
3–628
MJE103
MJE2955T
3–628
MJE104
MJE2955T
3–628
MJE105
TIP42B
3–883
MJE1090
TIP106
3–891
MJE1091
TIP107
3–891
MJE1092
TIP106
3–891
MJE1093
TIP107
3–891
MJE1100
TIP101
3–891
MJE1101
TIP101
3–891
MJE1102
TIP102
3–891
MJE1103
TIP102
3–891
MJE1123
3–616
MJE12007
MJE1320
3–620
MJE1290
2N6491
3–132
MJE1291
2N6491
3–132
MJE13002
3–655
MJE13003
3–655
MJE13004
MJE13005
3–661
MJE13005
3–661
MJE13006
MJE13007
3–667
MJE13007
3–667
MJE13008
MJE13009
3–676
MJE13009
3–676
相关PDF资料 |
PDF描述 |
|---|---|
| MJE18004D2BA | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18004D2BC | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18004D2AN | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18006AJ | 6 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18006AK | 6 A, 450 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE18004D2G | 功能描述:两极晶体管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE18004G | 功能描述:两极晶体管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE18006 | 功能描述:两极晶体管 - BJT 6A 450V 100W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE18006G | 功能描述:两极晶体管 - BJT BIP NPN 8A 450V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE18008 | 功能描述:两极晶体管 - BJT 8A 450V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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