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参数资料
| 型号： | MJE18004D2AF |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 54/67页 |
| 文件大小： | 534K |
| 代理商： | MJE18004D2AF |
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Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
Index and Cross Reference
1–22
Motorola Bipolar Power Transistor Device Data
INDEX AND CROSS REFERENCE (continued)
KSD986
MJE803
3–612
MDS1678
MJE181
3–589
MDS20
2N5657
3–63
MDS21
2N5657
3–63
MDS26
MJE181
3–589
MDS27
MJE181
3–589
MDS60
MJE350
3–606
MDS73
MJE171
3–589
MDS74
MJE172
3–589
MDS75
MJE253
3–596
MDS76
MJE181
3–589
MDS77
MJE171
3–589
MJ1000
MJ1001
3–423
MJ10000
3–433
MJ10002
MJ10007
3–445
MJ10003
MJ10007
3–445
MJ10004
MJ10005
3–439
MJ10005
3–439
MJ10006
MJ10007
3–445
MJ10007
3–445
MJ10009
3–451
MJ1001
3–423
MJ10012
3–457
MJ10015
3–461
MJ10016
3–461
MJ10020
3–466
MJ10021
3–466
MJ10022
3–472
MJ10023
3–472
MJ105
BU208A
3–226
MJ11011
MJ11013
3–478
MJ11012
MJ11014
3–478
MJ11013
3–478
MJ11014
3–478
MJ11015
3–478
MJ11016
3–478
MJ11017
3–481
MJ11018
3–481
MJ11021
3–481
MJ11022
3–481
MJ11028
MJ11030
3–485
MJ11029
MJ11031
3–485
MJ11030
3–485
MJ11031
3–485
MJ11032
3–485
MJ11033
3–485
MJ12002
BU208A
3–226
MJ12003
BU208A
3–226
MJ12004
BU208A
3–226
MJ12005
MJ16018
3–520
MJ12022
MJ16012
3–512
MJ13010
2N6547
3–140
MJ13018
BUV23
3–388
MJ13019
BUV23
3–388
MJ1302A
3–427
MJ13080
MJE16106
3–696
MJ13090
MJ16110
3–529
MJ13091
MJ16010
3–512
MJ13330
BUV23
3–388
MJ13331
BUV23
3–388
MJ13332
MJ13333
3–487
MJ13333
3–487
MJ14000
MJ14002
3–493
MJ14001
MJ14003
3–493
MJ14002
3–493
MJ14003
3–493
MJ15001
3–497
MJ15002
3–497
MJ15003
3–500
MJ15004
3–500
MJ15011
3–502
MJ15012
3–502
MJ15015
3–5
MJ15016
3–5
MJ15018
MJ15020
3–504
MJ15019
MJ15021
3–504
MJ15020
3–504
MJ15021
3–504
MJ15022
MJ15024
3–506
MJ15023
MJ15025
3–509
MJ15024
3–506
MJ15025
3–509
MJ15026
MJ15024
3–506
MJ15027
MJ15025
3–509
MJ16008
MJ16010
3–512
MJ16010
3–512
MJ16012
3–512
MJ16014
MJ16018
3–520
MJ16016
MJ16018
3–520
MJ16018
3–520
MJ16020
3–526
MJ16022
3–526
MJ16110
3–529
MJ205
BU208A
3–226
MJ21193
3–537
MJ21194
3–537
MJ2267
MJ15016
3–5
MJ2268
MJ2955
3–2
MJ2300
MJE270
3–600
MJ2305
MJE271
3–600
MJ2500
MJ2501
3–425
MJ2501
3–425
MJ2801
2N3055
3–2
MJ2802
2N5882
3–77
MJ2840
2N5878
3–74
MJ2841
2N5878
3–74
MJ2901
MJ15016
3–5
MJ2955
3–2
MJ2955A
3–5
MJ3000
MJ3001
3–425
MJ3001
3–425
MJ3029
BUX48A
3–401
MJ3030
BUX48A
3–401
MJ3042
MJ10012
3–457
MJ3055
2N3055
3–2
MJ3055A
2N3055A
3–5
MJ3237
MJE15031
3–684
MJ3238
MJE15031
3–684
MJ3247
MJE15030
3–684
MJ3248
MJE15030
3–684
MJ3281A
3–427
MJ4030
MJ11013
3–478
MJ4031
MJ11013
3–478
MJ4032
MJ11015
3–478
MJ4033
MJ11014
3–478
MJ4034
MJ11014
3–478
相关PDF资料 |
PDF描述 |
|---|---|
| MJE18004D2BA | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18004D2BC | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18004D2AN | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18006AJ | 6 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18006AK | 6 A, 450 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE18004D2G | 功能描述:两极晶体管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE18004G | 功能描述:两极晶体管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE18006 | 功能描述:两极晶体管 - BJT 6A 450V 100W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE18006G | 功能描述:两极晶体管 - BJT BIP NPN 8A 450V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE18008 | 功能描述:两极晶体管 - BJT 8A 450V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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