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参数资料
| 型号： | NAND256W3A2CZA1E |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 32M X 8 FLASH 3V PROM, 35 ns, PBGA55 |
| 封装： | 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-55 |
| 文件页数： | 19/57页 |
| 文件大小： | 916K |
| 代理商： | NAND256W3A2CZA1E |
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A
26/57
Copy Back Program
The Copy Back Program operation is used to copy
the data stored in one page and reprogram it in an-
other page.
The Copy Back Program operation does not re-
quire external memory and so the operation is
faster and more efficient because the reading and
loading cycles are not required. The operation is
particularly useful when a portion of a block is up-
dated and the rest of the block needs to be copied
to the newly assigned block.
If the Copy Back Program operation fails an error
is signalled in the Status Register. However as the
standard external ECC cannot be used with the
Copy Back operation bit error due to charge loss
cannot be detected. For this reason it is recom-
mended to limit the number of Copy Back opera-
tions on the same data and or to improve the
performance of the ECC.
The Copy Back Program operation requires three
steps:
1.
The source page must be read using the Read
A command (one bus write cycle to setup the
command and then 4 bus write cycles to input
the source page address). This operation
copies all 264 Words/ 528 Bytes from the page
into the Page Buffer.
2.
When the device returns to the ready state
(Ready/Busy High), the second bus write
cycle of the command is given with the 4 bus
cycles to input the target page address. Refer
to Table 10. for the addresses that must be the
same for the Source and Target pages.
3.
Then the confirm command is issued to start
the P/E/R Controller.
After a Copy Back Program operation, a partial-
page program is not allowed in the target page un-
til the block has been erased.
See Figure 18. for an example of the Copy Back
operation.
Table 10. Copy Back Program Addresses
Note: 1. DD = Dual Die.
Figure 18. Copy Back Operation
Density
Same Address for Source and
Target Pages
128 Mbit
A23
256 Mbit
A24
512 Mbit
A25
512 Mbit DD(1)
A24, A25
1 Gbit DD(1)
A25, A26
I/O
RB
Source
Address Inputs
SR0
ai07590b
8Ah
70h
00h
Copy Back
Code
Read
Code
Read Status Register
Target
Address Inputs
tBLBH1
(Read Busy time)
10h
Busy
tBLBH2
(Program Busy time)
相关PDF资料 |
PDF描述 |
|---|---|
| NAND01GR4A2AZB6 | 64M X 16 FLASH 1.8V PROM, 35 ns, PBGA63 |
| NAND01GW3B2CN1E | 128M X 8 FLASH 3V PROM, 25000 ns, PDSO48 |
| NAND04GR3B3AN6 | 512M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 |
| NAND512W3B3BZA1F | 64M X 8 FLASH 3V PROM, 35 ns, PBGA63 |
| NAND512W3B3CV1 | 64M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND256W4A0AN6E | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND32GAH0HZA5E | 制造商:Micron Technology Inc 功能描述:NAND EMMC - Trays |
| NAND32GAH0HZA5F | 制造商:Micron Technology Inc 功能描述:NAND EMMC - Tape and Reel |
| NAND32GAH0PZA5E | 制造商:Micron Technology Inc 功能描述:EMMC 4.3 4GB 12X16 41NM - Trays |
| NAND32GAH0PZA5F | 制造商:Micron Technology Inc 功能描述:NAND EMMC - Tape and Reel |
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