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参数资料
| 型号： | NAND256W3A2CZA1E |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 32M X 8 FLASH 3V PROM, 35 ns, PBGA55 |
| 封装： | 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-55 |
| 文件页数： | 8/57页 |
| 文件大小： | 916K |
| 代理商： | NAND256W3A2CZA1E |
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A
16/57
SIGNAL DESCRIPTIONS
See
and
3., Signal Names, for a brief overview of the sig-
nals connected to this device.
Inputs/Outputs (I/O0-I/O7). Input/Outputs 0 to 7
are used to input the selected address, output the
data during a Read operation or input a command
or data during a Write operation. The inputs are
latched on the rising edge of Write Enable. I/O0-I/
O7 are left floating when the device is deselected
or the outputs are disabled.
Inputs/Outputs (I/O8-I/O15). Input/Outputs 8 to
15 are only available in x16 devices. They are
used to output the data during a Read operation or
input data during a Write operation. Command and
Address Inputs only require I/O0 to I/O7.
The inputs are latched on the rising edge of Write
Enable. I/O8-I/O15 are left floating when the de-
vice is deselected or the outputs are disabled.
Address Latch Enable (AL). The Address Latch
Enable activates the latching of the Address inputs
in the Command Interface. When AL is high, the
inputs are latched on the rising edge of Write En-
able.
Command Latch Enable (CL). The
Command
Latch Enable activates the latching of the Com-
mand inputs in the Command Interface. When CL
is high, the inputs are latched on the rising edge of
Write Enable.
Chip Enable (E). The Chip Enable input acti-
vates the memory control logic, input buffers, de-
coders and sense amplifiers. When Chip Enable is
low, VIL, the device is selected.
While the device is busy programming or erasing,
Chip Enable transitions to High, VIH, are ignored
and the device does not revert to the Standby
mode.
While the device is busy reading:
■
the Chip Enable input should be held Low
during the whole busy time (tBLBH1) for
devices that do not present the Chip Enable
Don’t Care option. Otherwise, the read
operation in progress is interrupted and the
device reverts to the Standby mode.
■
for devices that feature the Chip Enable Don't
Care option, Chip Enable going High during
the busy time (tBLBH1) will not interrupt the
read operation and the device will not revert to
the Standby mode.
Read Enable (R). The Read Enable, R, controls
the sequential data output during Read opera-
tions. Data is valid tRLQV after the falling edge of R.
The falling edge of R also increments the internal
column address counter by one.
Write Enable (W). The Write Enable input, W,
controls writing to the Command Interface, Input
Address and Data latches. Both addresses and
data are latched on the rising edge of Write En-
able.
During power-up and power-down a recovery time
of 1s (min) is required before the Command Inter-
face is ready to accept a command. It is recom-
mended to keep Write Enable high during the
recovery time.
Write Protect (WP). The Write Protect pin is an
input that gives a hardware protection against un-
wanted program or erase operations. When Write
Protect is Low, VIL, the device does not accept any
program or erase operations.
It is recommended to keep the Write Protect pin
Low, VIL, during power-up and power-down.
Ready/Busy (RB). The Ready/Busy output, RB,
is an open-drain output that can be used to identify
if the P/E/R Controller is currently active.
When Ready/Busy is Low, VOL, a read, program or
erase operation is in progress. When the operation
completes Ready/Busy goes High, VOH.
The use of an open-drain output allows the Ready/
Busy pins from several memories to be connected
to a single pull-up resistor. A Low will then indicate
that one, or more, of the memories is busy.
Refer to the Ready/Busy Signal Electrical Charac-
teristics section for details on how to calculate the
value of the pull-up resistor.
VDD Supply Voltage. VDD provides the power
supply to the internal core of the memory device.
It is the main power supply for all operations (read,
program and erase).
An internal voltage detector disables all functions
whenever VDD is below 2.5V (for 3V devices) or
1.5V (for 1.8V devices) to protect the device from
any involuntary program/erase during power-tran-
sitions.
Each device in a system should have VDD decou-
pled with a 0.1F capacitor. The PCB track widths
should be sufficient to carry the required program
and erase currents
VSS Ground. Ground, VSS, is the reference for
the power supply. It must be connected to the sys-
tem ground.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND256W4A0AN6E | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND32GAH0HZA5E | 制造商:Micron Technology Inc 功能描述:NAND EMMC - Trays |
| NAND32GAH0HZA5F | 制造商:Micron Technology Inc 功能描述:NAND EMMC - Tape and Reel |
| NAND32GAH0PZA5E | 制造商:Micron Technology Inc 功能描述:EMMC 4.3 4GB 12X16 41NM - Trays |
| NAND32GAH0PZA5F | 制造商:Micron Technology Inc 功能描述:NAND EMMC - Tape and Reel |
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