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参数资料
| 型号： | NAND256W3A2CZA1E |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 32M X 8 FLASH 3V PROM, 35 ns, PBGA55 |
| 封装： | 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-55 |
| 文件页数： | 55/57页 |
| 文件大小： | 916K |
| 代理商： | NAND256W3A2CZA1E |
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A
SUMMARY DESCRIPTION
The NAND Flash 528 Byte/ 264 Word Page is a
family of non-volatile Flash memories that uses
the Single Level Cell (SLC) NAND cell technology.
It is referred to as the Small Page family. The de-
vices range from 128Mbits to 1Gbit and operate
with either a 1.8V or 3V voltage supply. The size of
a Page is either 528 Bytes (512 + 16 spare) or 264
Words (256 + 8 spare) depending on whether the
device has a x8 or x16 bus width.
The address lines are multiplexed with the Data In-
put/Output signals on a multiplexed x8 or x16 In-
put/Output bus. This interface reduces the pin
count and makes it possible to migrate to other
densities without changing the footprint.
Each block can be programmed and erased over
100,000 cycles. To extend the lifetime of NAND
Flash devices it is strongly recommended to imple-
ment an Error Correction Code (ECC). A Write
Protect pin is available to give a hardware protec-
tion against program and erase operations.
The devices feature an open-drain Ready/Busy
output that can be used to identify if the Program/
Erase/Read (P/E/R) Controller is currently active.
The use of an open-drain output allows the Ready/
Busy pins from several memories to be connected
to a single pull-up resistor.
A Copy Back command is available to optimize the
management of defective blocks. When a Page
Program operation fails, the data can be pro-
grammed in another page without having to re-
send the data to be programmed.
The devices are available in the following packag-
es:
■
TSOP48 12 x 20mm for all products
■
USOP48 12 x 17 x 0.65mm for 128Mb, 256Mb
and 512Mb products
■
VFBGA55 (8 x 10 x 1mm, 6 x 8 ball array,
0.8mm pitch) for 128Mb and 256Mb products
■
TFBGA55 (8 x 10 x 1.2mm, 6 x 8 ball array,
0.8mm pitch) for 512Mb Dual Die product
■
VFBGA63 (9 x 11 x 1mm, 6 x 8 ball array,
0.8mm pitch) for the 512Mb product
■
TFBGA63 (9 x 11 x 1.2mm, 6 x 8 ball array,
0.8mm pitch) for the 1Gb Dual Die product
Two options are available for the NAND Flash
family:
Chip Enable Don’t Care, which allows code to be
directly downloaded by a microcontroller, as Chip
Enable transitions during the latency time do not
stop the read operation.
A Serial Number, which allows each device to be
uniquely identified. The Serial Number options is
subject to an NDA (Non Disclosure Agreement)
and so not described in the datasheet. For more
details of this option contact your nearest ST Sales
office.
For information on how to order these options refer
vices are shipped from the factory with Block 0 al-
ways valid and the memory content bits, in valid
blocks, erased to ’1’.
See Table 2., Product Description, for all the de-
vices available in the family.
相关PDF资料 |
PDF描述 |
|---|---|
| NAND01GR4A2AZB6 | 64M X 16 FLASH 1.8V PROM, 35 ns, PBGA63 |
| NAND01GW3B2CN1E | 128M X 8 FLASH 3V PROM, 25000 ns, PDSO48 |
| NAND04GR3B3AN6 | 512M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 |
| NAND512W3B3BZA1F | 64M X 8 FLASH 3V PROM, 35 ns, PBGA63 |
| NAND512W3B3CV1 | 64M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND256W4A0AN6E | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND32GAH0HZA5E | 制造商:Micron Technology Inc 功能描述:NAND EMMC - Trays |
| NAND32GAH0HZA5F | 制造商:Micron Technology Inc 功能描述:NAND EMMC - Tape and Reel |
| NAND32GAH0PZA5E | 制造商:Micron Technology Inc 功能描述:EMMC 4.3 4GB 12X16 41NM - Trays |
| NAND32GAH0PZA5F | 制造商:Micron Technology Inc 功能描述:NAND EMMC - Tape and Reel |
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