参数资料
型号: NAND256W3A2CZA1E
厂商: NUMONYX
元件分类: PROM
英文描述: 32M X 8 FLASH 3V PROM, 35 ns, PBGA55
封装: 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-55
文件页数: 26/57页
文件大小: 916K
代理商: NAND256W3A2CZA1E
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
32/57
Hardware Simulation Models
Behavioral simulation models. Denali Software
Corporation models are platform independent
functional models designed to assist customers in
performing entire system simulations (typical
VHDL/Verilog). These models describe the logic
behavior and timings of NAND Flash devices, and
so allow software to be developed before hard-
ware.
IBIS simulations models. IBIS (I/O Buffer Infor-
mation Specification) models describe the behav-
ior of the I/O buffers and electrical characteristics
of Flash devices.
These models provide information such as AC
characteristics, rise/fall times and package me-
chanical data, all of which are measured or simu-
lated at voltage and temperature ranges wider
than those allowed by target specifications.
IBIS models are used to simulate PCB connec-
tions and can be used to resolve compatibility is-
sues when upgrading devices. They can be
imported into SPICETOOLS.
相关PDF资料
PDF描述
NAND01GR4A2AZB6 64M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
NAND01GW3B2CN1E 128M X 8 FLASH 3V PROM, 25000 ns, PDSO48
NAND04GR3B3AN6 512M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
NAND512W3B3BZA1F 64M X 8 FLASH 3V PROM, 35 ns, PBGA63
NAND512W3B3CV1 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
相关代理商/技术参数
参数描述
NAND256W4A0AN6E 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
NAND32GAH0HZA5E 制造商:Micron Technology Inc 功能描述:NAND EMMC - Trays
NAND32GAH0HZA5F 制造商:Micron Technology Inc 功能描述:NAND EMMC - Tape and Reel
NAND32GAH0PZA5E 制造商:Micron Technology Inc 功能描述:EMMC 4.3 4GB 12X16 41NM - Trays
NAND32GAH0PZA5F 制造商:Micron Technology Inc 功能描述:NAND EMMC - Tape and Reel