参数资料
型号: NAND512W3A2SN6E
元件分类: PROM
英文描述: 64M X 8 FLASH 3V PROM, PDSO48
封装: 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件页数: 20/51页
文件大小: 1009K
代理商: NAND512W3A2SN6E
Numonyx SLC SP 70 nm
Device operations
210403 - Rev 3
6.8
Read electronic signature
The device contains a manufacturer code and device code. To read these codes two steps
are required:
1.
first use one bus write cycle to issue the Read Electronic Signature command (90h),
followed by an address input of 00h
2.
then perform two bus read operations – the first reads the manufacturer code and the
second, the device code. Further bus read operations are ignored.
Refer to Table 13: Electronic signature, for information on the addresses.
SR0
Generic error
‘1’
Error – operation failed
‘0’
No error – operation successful
Table 12.
Status register bits
Bit
Name
Logic level
Definition
Table 13.
Electronic signature
Part number
I/O organization
Supply voltage
Manufacturer code
Device code
NAND512W3A2S
x8
3 V
20h
76h
NAND512W4A2S
x16
0020h
0056h
NAND512R3A2S
x8
1.8 V
20h
36h
NAND512R4A2S
x16
0020h
0046h
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