参数资料
型号: NAND512W3A2SN6E
元件分类: PROM
英文描述: 64M X 8 FLASH 3V PROM, PDSO48
封装: 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件页数: 4/51页
文件大小: 1009K
代理商: NAND512W3A2SN6E
Memory array organization
Numonyx SLC SP 70 nm
210403 - Rev 3
Figure 5.
Memory array organization
AI07587
Block = 32 pages
Page = 528 bytes (512+16)
512 bytes
512 Bytes
Spare
area
2nd half page
(256 bytes)
16
bytes
Block
8 bits
16
bytes
8 bits
Page
Page buffer, 512 bytes
1st half page
(256 bytes)
Block = 32 pages
Page = 264 words (256+8)
256 words
Spare
area
Main area
8
words
16 bits
8
words
16 bits
Page buffer, 264 words
Block
Page
x8 DEVICES
x16 DEVICES
相关PDF资料
PDF描述
NAND99R3M2AZBB5E SPECIALTY MEMORY CIRCUIT, PBGA107
NAND99W3M1AZBC5F SPECIALTY MEMORY CIRCUIT, PBGA137
NANDB9R4N2BZBA5F SPECIALTY MEMORY CIRCUIT, PBGA149
NANDBAR4N1BZBC5F SPECIALTY MEMORY CIRCUIT, PBGA137
NANDB9R4N2CZBA5E SPECIALTY MEMORY CIRCUIT, PBGA149
相关代理商/技术参数
参数描述
NAND512W3A2SN6F 制造商:Micron Technology Inc 功能描述:512MB NAND FLASH 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel
NAND512W3A2SZA6E 制造商:Micron Technology Inc 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA Tray 制造商:Micron Technology Inc 功能描述:NAND - Trays 制造商:Micron Technology Inc 功能描述:MICNAND512W3A2SZA6E 512MB NAND FLASH 制造商:Micron Technology 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA Tray
NAND512W3A2SZA6F 制造商:Micron Technology Inc 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA T/R 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel 制造商:Micron Technology 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA T/R
NAND512W4A0AN6E 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
NAND512W4A0AZA6E 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 512MBIT 32MX16 12US 63VFBGA - Trays