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| 型号： | NAND512W3A2SN6E |
| 元件分类： | PROM |
| 英文描述： | 64M X 8 FLASH 3V PROM, PDSO48 |
| 封装： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件页数： | 3/51页 |
| 文件大小： | 1009K |
| 代理商： | NAND512W3A2SN6E |
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Numonyx SLC SP 70 nm
Memory array organization
210403 - Rev 3
11/51
2
Memory array organization
The memory array is made up of NAND structures where 16 cells are connected in series.
The memory array is organized in blocks where each block contains 32 pages. The array is
split into two areas, the main area and the spare area. The main area of the array is used to
store data whereas the spare area is typically used to store error correction codes, software
flags or bad block identification.
In x8 devices the pages are split into a main area with two half pages of 256 Bytes each and
a spare area of 16 Bytes. In the x16 devices the pages are split into a 256 Word main area
and an 8 Word spare area. Refer to Figure 5: Memory array organization.
Bad blocks
The NAND Flash 528 Byte/264 Word page devices may contain bad blocks, that is blocks
that contain one or more invalid bits whose reliability is not guaranteed. Additional bad
blocks may develop during the lifetime of the device.
The bad block information is written prior to shipping (refer to Section 7.1: Bad block
management for more details).
Table 4 shows the minimum number of valid blocks in each device. The values shown
include both the bad blocks that are present when the device is shipped and the bad blocks
that could develop later on.
These blocks need to be managed using bad blocks management, block replacement or
error correction codes (refer to Section 7: Software algorithms).
Table 4.
Valid blocks
Density of device
Min
Max
512 Mbit
4016
4096
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND512W3A2SN6F | 制造商:Micron Technology Inc 功能描述:512MB NAND FLASH 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND512W3A2SZA6E | 制造商:Micron Technology Inc 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA Tray 制造商:Micron Technology Inc 功能描述:NAND - Trays 制造商:Micron Technology Inc 功能描述:MICNAND512W3A2SZA6E 512MB NAND FLASH 制造商:Micron Technology 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA Tray |
| NAND512W3A2SZA6F | 制造商:Micron Technology Inc 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA T/R 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel 制造商:Micron Technology 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA T/R |
| NAND512W4A0AN6E | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND512W4A0AZA6E | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 512MBIT 32MX16 12US 63VFBGA - Trays |
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