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| 型号： | NAND512W3A2SN6E |
| 元件分类： | PROM |
| 英文描述： | 64M X 8 FLASH 3V PROM, PDSO48 |
| 封装： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件页数： | 8/51页 |
| 文件大小： | 1009K |
| 代理商： | NAND512W3A2SN6E |
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Bus operations
Numonyx SLC SP 70 nm
210403 - Rev 3
4.5
Write protect
Write protect bus operations are used to protect the memory against program or erase
operations. When the Write Protect signal is Low the device will not accept program or
erase operations and so the contents of the memory array cannot be altered. The Write
Protect signal is not latched by Write Enable to ensure protection even during power-up.
4.6
Standby
When Chip Enable is High the memory enters standby mode, the device is deselected,
outputs are disabled and power consumption is reduced.
Table 6.
Bus operations
Bus operation
E
AL
CL
R
W
WP
I/O0 - I/O7
I/O8 - I/O15(1)
1.
Only for x16 devices.
Command input
VIL
VIH
Rising
X(2)
2.
WP must be VIH when issuing a program or erase command.
Command
X
Address input
VIL
VIH
VIL
VIH
Rising
X
Address
X
Data input
VIL
VIH
Rising
X
Data input
Data output
VIL
Falling
VIH
X
Data output
Write protect
X
VIL
XX
Standby
VIH
XX
X
Table 7.
Address insertion, x8 devices(1)(2)
1.
A8 is set Low or High by the 00h or 01h command, see Section 6.1: Pointer operations.
2.
Any additional address input cycles is ignored.
Bus
cycle
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
1st
A7
A6
A5
A4
A3
A2
A1
A0
2nd
A16
A15
A14
A13
A12
A11
A10
A9
3rd
A24
A23
A22
A21
A20
A19
A18
A17
4th
VIL
A25
Table 8.
Address insertion, x16 devices(1)(2)
1.
A8 is don’t care in x16 devices.
2.
Any additional address input cycle is ignored.
Bus
cycle
I/O8-
I/O15
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
1st
X
A7
A6
A5
A4
A3
A2
A1
A0
2nd
X
A16
A15
A14
A13
A12
A11
A10
A9
3rd
X
A24
A23
A22
A21
A20
A19
A18
A17
4th(4)
X
VIL
A25
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相关代理商/技术参数 |
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|---|---|
| NAND512W3A2SN6F | 制造商:Micron Technology Inc 功能描述:512MB NAND FLASH 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND512W3A2SZA6E | 制造商:Micron Technology Inc 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA Tray 制造商:Micron Technology Inc 功能描述:NAND - Trays 制造商:Micron Technology Inc 功能描述:MICNAND512W3A2SZA6E 512MB NAND FLASH 制造商:Micron Technology 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA Tray |
| NAND512W3A2SZA6F | 制造商:Micron Technology Inc 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA T/R 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel 制造商:Micron Technology 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA T/R |
| NAND512W4A0AN6E | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND512W4A0AZA6E | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 512MBIT 32MX16 12US 63VFBGA - Trays |
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