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参数资料
| 型号： | NAND512W3A2SN6E |
| 元件分类： | PROM |
| 英文描述： | 64M X 8 FLASH 3V PROM, PDSO48 |
| 封装： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件页数： | 6/51页 |
| 文件大小： | 1009K |
| 代理商： | NAND512W3A2SN6E |
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Signal descriptions
Numonyx SLC SP 70 nm
210403 - Rev 3
R
Input
The Read Enable, R, controls the sequential data output
during read operations. Data is valid tRLQV after the falling
edge of R. The falling edge of R also increments the
internal column address counter by one.
W
Input
The Write Enable input, W, controls writing to the
command interface, input address and data latches. Both
addresses and data are latched on the rising edge of Write
Enable.
During power-up and power-down a recovery time of 10 s
(min) is required before the command interface is ready to
accept a command. It is recommended to keep Write
Enable High during the recovery time.
WP
Input
The Write Protect pin is an input that gives a hardware
protection against unwanted program or erase operations.
When Write Protect is Low, VIL, the device does not accept
any program or erase operations.
It is recommended to keep the Write Protect pin Low, VIL,
during power-up and power-down.
RB
Output
The Ready/Busy output, RB, is an open-drain output that
can be used to identify if the P/E/R controller is currently
active.
When Ready/Busy is Low, VOL, a read, program or erase
operation is in progress. When the operation completes
Ready/Busy goes High, VOH.
The use of an open-drain output allows the Ready/Busy
pins from several memories to be connected to a single
pull-up resistor. A Low will then indicate that one, or more,
of the memories is busy.
During power-up and power-down a recovery time of 10 s
(min) is required before the command interface is ready to
accept a command. During the recovery time the RB signal
is Low, VOL.
Refer to the Section 10.1: Ready/Busy signal electrical
characteristics for details on how to calculate the value of
the pull-up resistor.
Supply
VDD
Supply voltage
VDD provides the power supply to the internal core of the
memory device. It is the main power supply for all
operations (read, program and erase).
An internal voltage detector disables all functions
Data protection) to protect the device from any involuntary
program/erase operations during power-transitions.
VSS
Ground
Ground, VSS, is the reference for the power supply. It must
be connected to the system ground.
Table 5.
Signal descriptions (continued)
Symbol
Type
Description
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND512W3A2SN6F | 制造商:Micron Technology Inc 功能描述:512MB NAND FLASH 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND512W3A2SZA6E | 制造商:Micron Technology Inc 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA Tray 制造商:Micron Technology Inc 功能描述:NAND - Trays 制造商:Micron Technology Inc 功能描述:MICNAND512W3A2SZA6E 512MB NAND FLASH 制造商:Micron Technology 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA Tray |
| NAND512W3A2SZA6F | 制造商:Micron Technology Inc 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA T/R 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel 制造商:Micron Technology 功能描述:SLC NAND Flash Parallel 3V/3.3V 512Mbit 64M x 8bit 12us 63-Pin VFBGA T/R |
| NAND512W4A0AN6E | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND512W4A0AZA6E | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 512MBIT 32MX16 12US 63VFBGA - Trays |
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