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参数资料
| 型号： | NTHC5513T1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 10/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 20V 2.1A CHIPFET |
| 产品变化通告： | Product Discontinuation 20/Aug/2008 |
| 标准包装： | 3,000 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.9A，2.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 80 毫欧 @ 2.9A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 180pF @ 10V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 带卷 (TR) |
| 其它名称： | NTHC5513T1OS |
NTHC5513
ChipFET is a trademark of Vishay Siliconix.
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NTHC5513/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHC5513T1G | 功能描述:MOSFET 20V +3.9A/-3A Complementary RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHC5513T1G | 制造商:ON Semiconductor 功能描述:DUAL N/P CHANNEL MOSFET 20V 1206A |
| NTHC60A3 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Crystal Clock Oscillator |
| NTHC60AA3 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Crystal Clock Oscillator |
| NTHC60B3 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Crystal Clock Oscillator |
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