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参数资料
| 型号： | NTHC5513T1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 8/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 20V 2.1A CHIPFET |
| 产品变化通告： | Product Discontinuation 20/Aug/2008 |
| 标准包装： | 3,000 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.9A，2.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 80 毫欧 @ 2.9A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 180pF @ 10V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 带卷 (TR) |
| 其它名称： | NTHC5513T1OS |
NTHC5513
SOLDERING FOOTPRINT*
0.45 7
2.03 2
0.08
2.03 2
0.08
0.018
0.63 5
0.025
0.63 5
0.025
1.09 2
0.043
0.17 8
0.007
0.45 7
0.018
0.66
0.711
0.028
0.66
0.25 4
0.010
0.026
Figure 22. Basic
0.026
Figure 23. Style 2
*For additional information on our Pb?Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BASIC PAD PATTERNS
The basic pad layout with dimensions is shown in
Figure 22. This is sufficient for low power dissipation
MOSFET applications, but power semiconductor
performance requires a greater copper pad area, particularly
for the drain leads.
The minimum recommended pad pattern shown in
Figure 23 improves the thermal area of the drain
confines of the basic footprint. The drain copper area is
0.0019 sq. in. (or 1.22 sq. mm). This will assist the power
dissipation path away from the device (through the copper
lead?frame) and into the board and exterior chassis (if
applicable) for the single device. The addition of a further
copper area and/or the addition of vias to other board layers
will enhance the performance still further.
connections (pins 5, 6, 7, 8) while remaining within the
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相关PDF资料 |
PDF描述 |
|---|---|
| NTHD2102PT1G | MOSFET PWR P-CH DUAL 8V CHIPFET |
| NTHD2110TT1G | MOSFET P-CH 12V 4.5A CHIPFET |
| NTHD3100CT3G | MOSFET N/P-CH COMPL 20V CHIPFET |
| NTHD3101FT3G | MOSFET P-CH 20V 3.2A CHIPFET |
| NTHD3102CT1G | MOSFET N/P-CH COMPL 20V CHIPFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHC5513T1G | 功能描述:MOSFET 20V +3.9A/-3A Complementary RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHC5513T1G | 制造商:ON Semiconductor 功能描述:DUAL N/P CHANNEL MOSFET 20V 1206A |
| NTHC60A3 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Crystal Clock Oscillator |
| NTHC60AA3 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Crystal Clock Oscillator |
| NTHC60B3 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Crystal Clock Oscillator |
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