参数资料
型号: NTHC5513T1
厂商: ON Semiconductor
文件页数: 4/10页
文件大小: 0K
描述: MOSFET N/P-CH 20V 2.1A CHIPFET
产品变化通告: Product Discontinuation 20/Aug/2008
标准包装: 3,000
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 2.9A,2.2A
开态Rds(最大)@ Id, Vgs @ 25° C: 80 毫欧 @ 2.9A,4.5V
Id 时的 Vgs(th)(最大): 1.2V @ 250µA
闸电荷(Qg) @ Vgs: 4nC @ 4.5V
输入电容 (Ciss) @ Vds: 180pF @ 10V
功率 - 最大: 1.1W
安装类型: 表面贴装
封装/外壳: 8-SMD,扁平引线
供应商设备封装: ChipFET?
包装: 带卷 (TR)
其它名称: NTHC5513T1OS
NTHC5513
TYPICAL N?CHANNEL PERFORMANCE CURVES
(T J = 25 ° C unless otherwise noted)
8
6
4
2
V GS = 5 V to 3 V
V GS = 2.4 V
2.2 V
2V
1.8 V
1.6 V
T J = 25 ° C
8
6
4
2
V DS ≥ 10 V
T C = ?55 ° C
0
1.4 V
0
25 ° C
100 ° C
0
1
2
3
4
5
6
7
8
9
10
0
0.5
1
1.5
2
2.5
3
0.15
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 1. On?Region Characteristics
I D = 2.7 A
T J = 25 ° C
0.1
V GS , GATE?TO?SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
T J = 25 ° C
V GS = 2.5 V
0.1
0.07
V GS = 4.5 V
0.05
0
0.04
0
1
2
3
4
5
6
1
3
5
7
V GS , GATE?TO?SOURCE VOLTAGE (VOLTS)
Figure 3. On?Resistance vs. Gate?to?Source
Voltage
1.7
I D = 2.7 A
V GS = 4.5 V
1.5
1.3
100
I D, DRAIN CURRENT (AMPS)
Figure 4. On?Resistance vs. Drain Current and
Gate Voltage
V GS = 0 V
T J = 100 ° C
10
1.1
0.9
0.7
1
?50
?25
0
25
50
75
100
125
150
2
4
6
8
10
12
14
16
18
20
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On?Resistance Variation with
Temperature
http://onsemi.com
4
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 6. Drain?to?Source Leakage Current
vs. Voltage
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