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参数资料
型号： PH28F640L18T85
厂商： INTEL CORP
元件分类： PROM
英文描述： StrataFlash Wireless Memory
中文描述： 4M X 16 FLASH 1.8V PROM, 85 ns, PBGA56
封装： 0.75 MM PITCH, LEAD FREE, VFBGA-56
文件页数： 16/106页
文件大小： 1272K
代理商： PH28F640L18T85
Intel StrataFlash Wireless Memory (L18)
April 2005
16
Intel StrataFlash Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
4.0
Ballout and Signal Descriptions
4.1
Signal Ballout
This section includes signal ballouts for the following packages:
VF BGA Package Ballout
SCSP Package Ballout
4.1.1
VF BGA Package Ballout
The Intel StrataFlash Wireless Memory (L18) is available in a VF BGA package with 0.75 mm
ball-pitch.
Figure 5
shows the ballout for the 64-Mbit and 128-Mbit devices in the 56-ball VF BGA
package with a 7x8 active-ball matrix.
Figure 6
shows the device ballout for the 256-Mbit device in
the 63-ball VF BGA package with a 7x9 active-ball matrix. Both package densities are ideal for
space-constrained board applications
Note:
On lower-density devices, upper-address balls can be treated as NC. (e.g., for 64-Mbit density, A22 will be NC)
Figure 5.
7x8 Active-Ball Matrix for 64-, and 128-Mbit Densities in VF BGA Packages
VFBGA 7x8
Bottom View - Ball Side Up
VFBGA 7x8
Top View - Ball Side Down
2
3
4
5
6
7
8
1
A8
VSS
VCC
VPP
A18
A6
A4
A9
A20
CLK
RST#
A17
A5
A3
A10
A21
WE#
A19
A7
A2
A14
WAIT
A16
D12
WP#
A22
D15
D6
D4
D2
D1
CE#
A0
D14
D13
D11
D10
D9
D0
OE#
ADV#
A1
VSSQ
VCC
D3
VCCQ
D8
VSSQ
A11
A12
A13
A15
VCCQ
VSS
D7
D5
A
B
C
D
E
F
G
2
3
4
5
6
7
8
1
A8
VSS
VCC
VPP
A18
A6
A4
A9
A20
CLK
RST#
A17
A5
A3
A10
A21
WE#
A19
A7
A2
A14
WAIT
A16
D12
WP#
A22
D15
D6
D4
D2
D1
CE#
A0
D14
D13
D11
D10
D9
D0
OE#
ADV#
A1
VSSQ
VCC
D3
VCCQ
D8
VSSQ
A11
A12
A13
A15
VCCQ
VSS
D7
D5
A
B
C
D
E
F
G
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相关代理商/技术参数
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