参数资料
型号: PH28F640L18T85
厂商: INTEL CORP
元件分类: PROM
英文描述: StrataFlash Wireless Memory
中文描述: 4M X 16 FLASH 1.8V PROM, 85 ns, PBGA56
封装: 0.75 MM PITCH, LEAD FREE, VFBGA-56
文件页数: 26/106页
文件大小: 1272K
代理商: PH28F640L18T85
Intel StrataFlash Wireless Memory (L18)
April 2005
26
Intel StrataFlash Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
6.0
Electrical Specifications
6.1
DC Current Characteristics
Sym
Parameter
V
CCQ
1.7 V – 2.0 V
1.35 V - 2.0 VUnit
Typ
Max
Test Conditions
Notes
I
LI
Input Load Current
-
±1
μA
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
V
IN
= V
CCQ
or V
SS
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
V
IN
CCQ
or V
SS
V
CC
= V
CC
Max
V
= V
CCQ
Max
CE# = V
CCQ
RST# = V
(for I
CCS
)
RST# = GND (for I
CCD
)
WP# = V
IH
V
CC
= V
CC
Max
V
CCQ
= V
CCQ
Max
CE# = V
SSQ
RST# = V
CCQ
All inputs are at rail to rail (V
CCQ
or V
SSQ
).
1
I
LO
Output
Leakage
Current
DQ[15:0], WAIT
-
±1
μA
I
CCS
I
CCD
V
CC
Standby,
Power Down
64-Mbit
128-Mbit
15
20
30
70
μA
1,2
256-Mbit
25
110
I
CCAPS
APS
64-Mbit
128-Mbit
15
20
30
70
μA
256-Mbit
25
110
I
CCR
Average
V
CC
Read
Current
Asynchronous Single-Word
f = 5MHz (1 CLK)
Page-Mode Read
f = 13 MHz (5 CLK)
13
15
mA
V
CC
= V
CC
Max
CE# = V
IL
OE# = V
IH
Inputs: V
IL
or
V
IH
1
8
9
mA 4-Word Read
Synchronous Burst Read
f = 40MHz, LC = 3
12
14
16
16
18
20
mA Burst length = 4
mA Burst length = 8
mA Burst length = 16
Burst length =
Continuous
mA Burst length = 4
mA Burst length = 8
mA Burst length = 16
Burst Length =
Continuous
V
= V
PPL
, program/erase in
progress
V
PP
= V
PPH
, program/erase in
progress
20
25
mA
Synchronous Burst Read
f = 54MHz, LC = 4
15
18
21
18
22
25
22
27
mA
I
CCW,
I
CCE
V
CC
Program Current,
V
CC
Erase Current
35
50
mA
1,3,4,
7
1,3,5,
7
25
32
mA
I
CCWS,
I
CCES
V
CC
Program Suspend Current,
V
CC
Erase Suspend Current
64-Mbit
128-Mbit
256-Mbit
15
20
25
30
70
110
μA
CE# = V
CCQ
; suspend in progress 1,6,3
I
PPS,
I
PPWS,
I
PPES
V
PP
Standby Current,
V
PP
Program Suspend Current,
V
PP
Erase Suspend Current
0.2
5
μA
V
PP
= V
PPL
, suspend in progress
1,3
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