参数资料
型号: PH28F640L18T85
厂商: INTEL CORP
元件分类: PROM
英文描述: StrataFlash Wireless Memory
中文描述: 4M X 16 FLASH 1.8V PROM, 85 ns, PBGA56
封装: 0.75 MM PITCH, LEAD FREE, VFBGA-56
文件页数: 6/106页
文件大小: 1272K
代理商: PH28F640L18T85
Intel StrataFlash Wireless Memory (L18)
April 2005
6
Intel StrataFlash Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Revision History
Revision Date
Revision
Description
10/15/02
-001
Initial Release
01/20/03
-002
Revised 256-Mbit Partition Size
Revised 256-Mbit Memory Map
Change WAIT function to de-assert during Asynchronous Operations (Asynchronous Reads and all
Writes)
Change WAIT function to active during Synchronous Non-Array Read
Updated all Waveforms to reflect new WAIT function
Revised Section 8.2.2
Added Synchronous Read to Write transition Section
Improved 1.8 Volt I/O Bin 2 speed to 95ns from 105ns
Added new AC specs: R15, R16, R17, R111, R311, R312, W21, and W22
Various text edits
04/11/03
-003
Added SCSP for 128/0 and 256/0 Ball-out and Mechanical Drawing
08/04/03
-004
Changed I
CCS
and I
CCR
values
Added 256-Mbit AC Speed
Changed Program and Erase Spec
Combined the Buffered Programming Flow Chart and Read While Buffered programming Flow
Chart
Revised Read While Buffered Programming Flow Chart
Revised Appendix A Write State Machine
Revised CFI Table 21 CFI Identification
Various text edits.
01/20/04
-005
Various text clarifications, various text edits, block locking state diagram clarification, synchronous
read to write timing clarification, write to synchronous read timing clarification
05/22/04
-006
Minor text edits
Changed Capacitance values
Changed Standby Current (typ), Power Down Current (typ), Erase Suspend Current (typ), and
Automatic Power Savings Current (typ)
Updated Transient Equialent Testing Load Circuit
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