- 您现在的位置：买卖IC网 > PDF目录367934 > PH28F640L18T85 (INTEL CORP) StrataFlash Wireless Memory PDF资料下载
参数资料
| 型号： | PH28F640L18T85 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | StrataFlash Wireless Memory |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 85 ns, PBGA56 |
| 封装： | 0.75 MM PITCH, LEAD FREE, VFBGA-56 |
| 文件页数： | 43/106页 |
| 文件大小： | 1272K |
| 代理商： | PH28F640L18T85 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页当前第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页第87页第88页第89页第90页第91页第92页第93页第94页第95页第96页第97页第98页第99页第100页第101页第102页第103页第104页第105页第106页
Intel StrataFlash Wireless Memory (L18)
Datasheet
Intel StrataFlash Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
43
8.3
Power Supply Decoupling
Flash memory devices require careful power supply decoupling. Three basic power supply current
considerations are: 1) standby current levels; 2) active current levels; and 3) transient peaks
produced when CE# and OE# are asserted and deasserted.
When the device is accessed, many internal conditions change. Circuits within the device enable
charge-pumps, and internal logic states change at high speed. All of these internal activities
produce transient signals. Transient current magnitudes depend on the device outputs’ capacitive
and inductive loading. Two-line control and correct decoupling capacitor selection suppress
transient voltage peaks.
Because Intel
Multi-Level Cell (MLC) flash memory devices draw their power from V
CC
, VPP,
and VCCQ, each power connection should have a 0.1 μF ceramic capacitor connected to a
corresponding ground connection. High-frequency, inherently low-inductance capacitors should be
placed as close as possible to package leads.
Additionally, for every eight devices used in the system, a 4.7 μF electrolytic capacitor should be
placed between power and ground close to the devices. The bulk capacitor is meant to overcome
voltage droop caused by PCB trace inductance.
Figure 23.
Reset Operation Waveforms
(
A) Reset during
read mode
(B) Reset during
program or block erase
P1
≤
P2
(C) Reset during
program or block erase
P1
≥
P2
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
RST# [P]
RST# [P]
RST# [P]
Abort
Complete
Abort
Complete
V
CC
0V
V
CC
(D) VCC Power-up to
RST# high
P1
R5
P2
P3
P2
R5
R5
相关PDF资料 |
PDF描述 |
|---|---|
| PH2907A | PNP switching transistor |
| PH2907 | PNP switching transistor |
| PH2931-135S | Rail-to-Rail, Very Low Noise Universal Dual Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: -40°C to +85°C |
| PH2931-I3 | Radar Pulsed Power Transistor, 135W, 20ms Pulse, 1% Duty 2.9 - 3.1 GHz |
| PH2931-20M | Radar Pulsed Power Transistor, 20W,100ms Pulse, 10% Duty 2.9-3.1 GHz |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PH28F640W18BD60 | 制造商:Micron Technology Inc 功能描述:PH28F640W18BD60S L785 |
| PH28F640W18BD60B | 制造商:Micron Technology Inc 功能描述:NUMPH28F640W18BD60B PH28F640W18BD60S L78 |
| PH28F640W18TE60B | 制造商:Micron Technology Inc 功能描述:64MB, CRYSTAL .75 VFBGA 1.8 LF - Tape and Reel |
| PH28F640W30BD70A | 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel/Serial 1.8V 64Mbit 4M x 16bit 70ns 56-Pin VFBGA Tray 制造商:Micron Technology Inc 功能描述:NUMPH28F640W30BD70A MM#862859FLASH 28F64 |
| PH2-8-SGA | 制造商:Adam Technologies Inc 功能描述:PH2 Series Dual Row 8 Position Straight 2.54 mm Centerline Pin Header |
发布紧急采购，3分钟左右您将得到回复。