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参数资料
| 型号： | S29JL032H60TAI023 |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 2M X 16 FLASH 3V PROM, 60 ns, PDSO48 |
| 封装： | MO-142DD, TSOP-48 |
| 文件页数： | 25/66页 |
| 文件大小： | 1691K |
| 代理商： | S29JL032H60TAI023 |
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March 10, 2005 S29JL032H_00A11
S29JL032H
29
Ad vance
Info rmat i o n
Table 11. Device Geometry Definition
Table 12. Primary Vendor-Specific Extended Query
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
27h
4Eh
0016h
Device Size = 2N byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
58h
0002h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
003Eh
0000h
0001h
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
86h
0031h
Major version number, ASCII (reflects modifications to the silicon)
44h
88h
0033h
Minor version number, ASCII (reflects modifications to the CFI table)
45h
8Ah
000Ch
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Silicon Revision Number (Bits 7-2)
46h
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
8Eh
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
90h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
92h
0004h
Sector Protect/Unprotect scheme
01 =29F040 mode, 02 = 29F016 mode, 03 = 29F400, 04 = 29LV800
mode
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