参数资料
型号: S29JL032H60TAI023
厂商: ADVANCED MICRO DEVICES INC
元件分类: PROM
英文描述: 2M X 16 FLASH 3V PROM, 60 ns, PDSO48
封装: MO-142DD, TSOP-48
文件页数: 32/66页
文件大小: 1691K
代理商: S29JL032H60TAI023
36
S29JL032H
S29JL032H_00A11 March 10, 2005
Advan ce
In form ati o n
Figure 4. Erase Operation
Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase
operation and then read data from, or program data to, any sector not selected
for erasure. The bank address is required when writing this command. This com-
mand is valid only during the sector erase operation, including the 80 s time-out
period during the sector erase command sequence. The Erase Suspend command
is ignored if written during the chip erase operation or Embedded Program
algorithm. The bank address must contain one of the sectors currently selected
for erase.
When the Erase Suspend command is written during the sector erase operation,
the device requires a maximum of 20 s to suspend the erase operation. How-
ever, when the Erase Suspend command is written during the sector erase
time-out, the device immediately terminates the time-out period and suspends
the erase operation.
After the erase operation has been suspended, the bank enters the erase-sus-
pend-read mode. The system can read data from or program data to any sector
not selected for erasure. (The device “erase suspends” all sectors selected for
erasure.) Reading at any address within erase-suspended sectors produces sta-
tus information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2
together, to determine if a sector is actively erasing or is erase-suspended. Refer
to the Write Operation Status section for information on these status bits.
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh?
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See Table 13 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
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