参数资料
型号: S29JL032H60TAI023
厂商: ADVANCED MICRO DEVICES INC
元件分类: PROM
英文描述: 2M X 16 FLASH 3V PROM, 60 ns, PDSO48
封装: MO-142DD, TSOP-48
文件页数: 30/66页
文件大小: 1691K
代理商: S29JL032H60TAI023
34
S29JL032H
S29JL032H_00A11 March 10, 2005
Advan ce
In form ati o n
Figure 3. Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is ini-
tiated by writing two unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the chip erase command,
which in turn invokes the Embedded Erase algorithm. The device does not require
the system to preprogram prior to erase. The Embedded Erase algorithm auto-
matically preprograms and verifies the entire memory for an all zero data pattern
prior to electrical erase. The system is not required to provide any controls or tim-
ings during these operations. Table 13 shows the address and data requirements
for the chip erase command sequence.
When the Embedded Erase algorithm is complete, that bank returns to the read
mode and addresses are no longer latched. The system can determine the status
of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. Refer to the Write
Operation Status section for information on these status bits.
Any commands written during the chip erase operation are ignored. However,
note that a hardware reset immediately terminates the erase operation. If that
occurs, the chip erase command sequence should be reinitiated once that bank
has returned to reading array data, to ensure data integrity. Note that the SecSi
Sector, autoselect, and CFI functions are unavailable when an erase operation is
in progress.
START
Write Program
Command Sequence
Data Poll
from System
Verify Data?
No
Yes
Last Address?
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
Note: See Table 13 for program command sequence.
相关PDF资料
PDF描述
S29AL016D70BAI022 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
S29AL016D70TAN013 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
S29AL016D90BFN013 1M X 16 FLASH 3V PROM, 90 ns, PBGA48
SRL91-17UGR2-BB99 ROCKER SWITCH, SPDT, MOMENTARY, PANEL MOUNT
SRL91-13AAR2-BB99 ROCKER SWITCH, SPDT, LATCHED, PANEL MOUNT
相关代理商/技术参数
参数描述
S29JL032H60TAI210 制造商:SPANSION 制造商全称:SPANSION 功能描述:32M BIT CMOS 3.0V FLASH MEMORY
S29JL032H60TAI211 制造商:SPANSION 制造商全称:SPANSION 功能描述:32M BIT CMOS 3.0V FLASH MEMORY
S29JL032H60TAI212 制造商:SPANSION 制造商全称:SPANSION 功能描述:32M BIT CMOS 3.0V FLASH MEMORY
S29JL032H60TAI213 制造商:SPANSION 制造商全称:SPANSION 功能描述:32M BIT CMOS 3.0V FLASH MEMORY
S29JL032H60TAI220 制造商:SPANSION 制造商全称:SPANSION 功能描述:32M BIT CMOS 3.0V FLASH MEMORY