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参数资料
| 型号： | S29JL032H60TAI023 |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 2M X 16 FLASH 3V PROM, 60 ns, PDSO48 |
| 封装： | MO-142DD, TSOP-48 |
| 文件页数： | 61/66页 |
| 文件大小： | 1691K |
| 代理商： | S29JL032H60TAI023 |
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62
S29JL032H
S29JL032H_00A11 March 10, 2005
Advan ce
In form ati o n
Erase And Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25°C, VCC = 3.0 V, 100,000 cycles; checkerboard data
pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 13 for further information on command definitions.
6. The device has a minimum cycling endurance of 100,000 cycles per sector.
TSOP Pin Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.4
2
sec
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
28
sec
Byte Program Time
4
80
s
Excludes system level
overhead (Note 5)
Word Program Time
6
100
s
Accelerated Byte/Word Program Time
4
70
s
Chip Program Time
Byte Mode
12.6
50
sec
Word Mode
12.0
35
Accelerated Mode
10
30
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
TSOP
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
TSOP
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
TSOP
7.5
9
pF
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