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| 型号： | S71GL064A04BAW0F3 |
| 厂商： | Spansion Inc. |
| 英文描述： | Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| 中文描述： | 堆叠式多芯片产品（MCP）的闪存和RAM |
| 文件页数： | 84/102页 |
| 文件大小： | 1606K |
| 代理商： | S71GL064A04BAW0F3 |
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82
S71GL032A Based MCPs
S71GL032A_00_A0 March 31, 2005
Advance
Info rmation
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested)
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Ambient Temperature with Power Applied . . . . . . . . . . . . . . . -40°C to +85°C
Supply Voltage to Ground Potential . . . . . . . . . . . . . . . . . . . . . -0.4V to 4.6V
DC Voltage Applied to Outputs in High-Z
State (note 1, 2, 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.4V to 3.7V
DC Input Voltage (note 1, 2, 3) . . . . . . . . . . . . . . . . . . . . . . . . -0.4V to 3.7V
Output Current into Outputs (Low). . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Static Discharge Voltage . . . . . . . . . >2001V (per MIL-STD-883, Method 3015)
Latch-up Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >200 mA
Notes:
1. VIH(MAX) = VCC + 0.5V for pulse durations less than 20 ns.
2. VIL(MIN) = –0.5V for pulse durations less than 20 ns.
3. Overshoot and undershoot specifications are characterized and are not 100% tested.
Operating Range
Table 25. DC Electrical Characteristics (Over the Operating Range)
Notes:
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC =
VCC(typ.), TA = 25°C.
Ambient Temperature (TA)
VCC
-25°C to +85°C
2.7V to 3.3V
Parameter
Description
Test Conditions
Min.
Typ.
(note 1)
Max
Unit
VCC
Supply Voltage
2.7
3.3
V
VOH
Output High Voltage
IOH = –1.0 mA
VCC - 0.4
VOL
Output Low Voltage
IOL = 0.1 mA
0.4
VIH
Input High Voltage
0.8 * VCC
VCC + 0.4
VIL
Input Low Voltage
F = 0
-0.4
0.4
IIX
Input Leakage Current
GND ≤ VIN ≤ VCC
-1
+1
A
IOZ
Output Leakage Current
GND ≤ VOUT ≤ VCC, Output Disabled
-1
+1
ICC
VCC Operating Supply Current
f = fMAX = 1/tRC
VCC = 3.3V
IOUT = 0 mA
CMOS Levels
TBD
15
mA
f = 1 MHz
3
ISB1
Automatic CE# Power-Down
Current—CMOS Inputs
CE# ≥ VCC – 0.2V, CE2 ≤ 0.2V
VIN ≥ VCC – 0.2V, VIN ≤ 0.2V,
f = fmax (Address and Data Only),
f=0 (OE#, WE#, BHE# and BLE#)
250
A
ISB2
Automatic CE# Power-Down
Current—CMOS Inputs
CE# ≥ VCC – 0.2V, CE2 ≤ 0.2V
VIN ≥ VCC – 0.2V or VIN ≤ 0.2V,
f = 0, VCC = 3.3V
40
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| S71GL064A04BFI0B3 | Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S71GL064A04BFI0B0 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL064A04BFI0B2 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL064A04BFI0B3 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL064A04BFI0F0 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL064A04BFI0F2 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
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