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| 型号： | SI8417DB-T2-E1 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 3/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 14.5A 2X2 6MFP |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 14.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 21 毫欧 @ 1A，4.5V |
| Id 时的 Vgs(th)（最大）： | 900mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 57nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 2220pF @ 6V |
| 功率 - 最大： | 6.57W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-MICRO FOOT? |
| 供应商设备封装： | 6-Micro Foot? |
| 包装： | 带卷 (TR) |
Si8417DB
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
I S
I SM
T C = 25 °C
- 5.5
- 20
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = - 1 A, V GS = 0 V
I F = - 1 A, dI/dt = 100 A/μs, T J = 25 °C
- 0.65
311
1.136
116
195
- 1.2
467
1.705
V
ns
μC
ns
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73531
S11-1382-Rev. D, 11-Jul-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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