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| 型号： | SI8417DB-T2-E1 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 8/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 14.5A 2X2 6MFP |
| 标准包装： | 3,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 14.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 21 毫欧 @ 1A，4.5V |
| Id 时的 Vgs(th)（最大）： | 900mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 57nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 2220pF @ 6V |
| 功率 - 最大： | 6.57W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-MICRO FOOT? |
| 供应商设备封装： | 6-Micro Foot? |
| 包装： | 带卷 (TR) |
AN824
Vishay Siliconix
PCB Design and Assembly Guidelines
For MICRO FOOT r Products
Johnson Zhao
INTRODUCTION
Vishay Siliconix’s MICRO FOOT product family is based on a
wafer-level chip-scale packaging (WL-CSP) technology that
implements a solder bump process to eliminate the need for an
outer package to encase the silicon die. MICRO FOOT
products include power MOSFETs, analog switches, and
power ICs.
For battery powered compact devices, this new packaging
technology reduces board space requirements, improves
thermal performance, and mitigates the parasitic effect typical
of leaded packaged products. For example, the 6 ? bump
MICRO FOOT Si8902EDB common drain power MOSFET,
which measures just 1.6 mm x 2.4 mm, achieves the same
performance as TSSOP ? 8 devices in a footprint that is 80%
smaller and with a 50% lower height profile (Figure 1). A
MICRO FOOT analog switch, the 6 ? bump DG3000DB, offers
low charge injection and 1.4 W on ? resistance in a footprint
measuring just 1.08 mm x 1.58 mm (Figure 2).
Vishay Siliconix MICRO FOOT products can be handled with
the same process techniques used for high-volume assembly
of packaged surface-mount devices. With proper attention to
PCB and stencil design, the device will achieve reliable
performance without underfill. The advantage of the device’s
small footprint and short thermal path make it an ideal option
for space-constrained applications in portable devices such as
battery packs, PDAs, cellular phones, and notebook
computers.
FIGURE 1. 3D View of MICRO FOOT Products Si8902DB and
Si8900EDB
3 2 1
0.18 ~ 0.25
A
0.5 1.08
This application note discusses the mechanical design and
reliability of MICRO FOOT, and then provides guidelines for
board layout, the assembly process, and the PCB rework
process.
0.285
0.285
0.5
1.58
B
FIGURE 2. Outline of MICRO FOOT CSP & Analog
Switch DG3000DB
Document Number: 71990
06-Jan-03
www.vishay.com
1
相关PDF资料 |
PDF描述 |
|---|---|
| SI8439DB-T1-E1 | MOSFET P-CH 8V D-S MICROFOOT |
| SI8441DB-T2-E1 | MOSFET P-CH 20V 10.5A 2X2 6MFP |
| SI8447DB-T2-E1 | MOSFET P-CH D-S 20V MICROFOOT |
| SI8461DB-T2-E1 | MOSFET P-CH D-S 20V MICROFOOT |
| SI8465DB-T2-E1 | MOSFET P-CH D-S 20V MICROFOOT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI84-180 | 制造商:DELTA 制造商全称:Delta Electronics, Inc. 功能描述:SMT Power Inductor |
| SI84-180K | 制造商:DELTA 制造商全称:Delta Electronics, Inc. 功能描述:SMT Power Inductor |
| SI84-181 | 制造商:DELTA 制造商全称:Delta Electronics, Inc. 功能描述:SMT Power Inductor |
| SI84-181K | 制造商:DELTA 制造商全称:Delta Electronics, Inc. 功能描述:SMT Power Inductor |
| SI8419DB-T1-E1 | 功能描述:MOSFET 8.0V 11.7A 6.25W 35mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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